CPC3730C

CPC3730C Datasheet

CPC3730C

Part	Datasheet
CPC3730C	CPC3730C (pdf)

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BVDSX/ BVDGX 350V RDS ON max IDSS min 140mA Package SOT-89 • Depletion mode device offers low RDS ON at cold temperatures • Low on resistance 30 ohms max. at 25ºC • High input impedance • High breakdown voltage 350V • Low VGS off voltage to -3.9V • Small package size SOT-89 • Ignition modules • Normally-on switches • Solid state relays • Converters • Telecommunications • Power supply Package Pinout SOT-89 CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs The CPC3730C is an N-channel depletion mode field effect transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3730C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730C offers a low 30 ohm maximum on-state resistance at 25ºC. The CPC3730C has a minimum breakdown voltage of 350V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3730C CPC3730CTR Description SOT-89 100/Tube SOT-89 2000/Reel Switching Waveform INPUT -10V 10%-10V 10% t ON t OFF t OFF td ON tr td ON tr td OFF tFtd OFF OUTPUT Test Circuit PULSE GENERATOGRENERATOR Rgen Rgen INPUT DS-CPC3730C-R00B.2 OUTPUT D.U.T. D.U.T. CPC3730C Absolute Maximum Ratings Parameter Ratings Units Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation ±20 Operational Temperature -55 to +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on FR4 board 1"x1"x0.062" Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS off with Temperatures Gate Body Leakage Current Drain-to-Source Leakage Current BVDSX VGS off dVGS off /dT IGSS ID off IDSS RDS on dRDS on /dT

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BVDSX/ BVDGX
350V

RDS ON max

IDSS min 140mA

Package SOT-89
• Depletion mode device offers low RDS ON at cold temperatures
• Low on resistance 30 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 350V
• Low VGS off voltage to -3.9V
• Small package size SOT-89
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
• Telecommunications
• Power supply

Package Pinout

SOT-89

CPC3730C

N-Channel Depletion-Mode Vertical DMOS FETs

The CPC3730C is an N-channel depletion mode field effect transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3730C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications.

This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3730C offers a low 30 ohm maximum on-state resistance at 25ºC.

The CPC3730C has a minimum breakdown voltage of 350V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information

Part # CPC3730C CPC3730CTR

Description SOT-89 100/Tube SOT-89 2000/Reel

Switching Waveform

INPUT -10V 10%-10V
10% t ON
t OFF
t OFF
td ON
tr td ON
tr td OFF
tFtd OFF

OUTPUT

Test Circuit

PULSE GENERATOGRENERATOR

Rgen

Rgen

INPUT

DS-CPC3730C-R00B.2

OUTPUT

D.U.T. D.U.T.

CPC3730C

Absolute Maximum Ratings

Parameter

Ratings Units

Drain-to-Source Voltage

Gate-to-Source Voltage Total Package Dissipation
±20

Operational Temperature
-55 to +125 ºC

Storage Temperature
-55 to +125 ºC
1 Mounted on FR4 board 1"x1"x0.062"

Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.

Electrical Characteristics

Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS off with Temperatures Gate Body Leakage Current

Drain-to-Source Leakage Current

BVDSX VGS off dVGS off /dT

IGSS

ID off

IDSS RDS on dRDS on /dT

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Datasheet ID: CPC3730C 644120