IS42S81600D IS42S16800D
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IS42S16800D-75EBLI (pdf) |
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PDF Datasheet Preview |
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IS42S81600D IS42S16800D 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JULY 2008 • Clock frequency 166, 143, 133 MHz • Fully synchronous all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S81600D VDD VDDQ 3.3V 3.3V IS42S16800D 3.3V 3.3V • LVTTL interface • Programmable burst length 1, 2, 4, 8, full page • Programmable burst sequence Sequential/Interleave • Auto Refresh CBR • Self Refresh with programmable refresh periods • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency 2, 3 clocks • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Industrial Temperature Availability • Lead-free Availability OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. IS42S81600D 4M x8x4 Banks 54-pin TSOPII IS42S16800D 2M x16x4 Banks 54-pin TSOPII 54-ball BGA KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 -7 -75E Unit 10 ns 166 143 Mhz 125 100 133 Mhz Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. 07/28/08 IS42S81600D, IS42S16800D DEVICE OVERVIEW The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 33,554,432-bit bank is organized as 4,096 rows by 512 columns by 16 bits or 4,096 rows by 1,024 columns by 8 bits. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in BURST DEFINITION table. BURST DEFINITION Burst Length Full Page y Starting Column Address A1 A0 A2 A1 A0 n = A0-A7 location 0-y Order of Accesses Within a Burst Type = Sequential Type = Interleaved 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3 1-0-3-2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Cn, Cn + 1, Cn + 2 Cn + 3, Cn + 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not Supported Integrated Silicon Solution, Inc. 07/28/08 IS42S81600D, IS42S16800D CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier n + m - 1 , and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in CAS Latency diagrams. The Allowable Operating Frequency table indicates the operating frequencies at which each CAS latency setting can be used. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Operating Mode The normal operating mode is selected by setting M7 and M8 to zero the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location nonburst accesses. CAS Latency Allowable Operating Frequency MHz Speed CAS Latency = 2 CAS Latency = 3 -75E CAS LATENCY COMMAND DQ READ DOUT CAS Latency - 2 T0 CLK ORDERING INFORMATION - VDD = 3.3V Commercial Range 0°C to 70°C Frequency 166 MHz 143 MHz Speed ns 6 7 Order Part No. IS42S81600D-6T IS42S81600D-7T Package 54-Pin TSOPII 54-Pin TSOPII Frequency 166 MHz 166 MHz 143 MHz 143 MHz Speed ns 6 7 Order Part No. IS42S16800D-6T IS42S16800D-6B IS42S16800D-7T IS42S16800D-7B Package 54-Pin TSOPII 54-ball BGA 54-Pin TSOPII 54-ball BGA ORDERING INFORMATION - VDD = 3.3V Industrial Range -40°C to 85°C Frequency 143 MHz Speed ns Order Part No. Package IS42S81600D-7TI 54-Pin TSOPII Frequency 143 MHz 143 MHz Speed ns 7 Order Part No. IS42S16800D-7TI IS42S16800D-7BI Package 54-Pin TSOPII 54-ball BGA Integrated Silicon Solution, Inc. 07/28/08 IS42S81600D, IS42S16800D ORDERING INFORMATION - VDD = 3.3V Commercial Range 0°C to 70°C Frequency 166 MHz 143 MHz Speed ns 6 7 Order Part No. IS42S81600D-6TL IS42S81600D-7TL Package 54-Pin TSOPII, Lead-free 54-Pin TSOPII, Lead-free Frequency 166 MHz 166 MHz 143 MHz 143 MHz 143 MHz 133 MHz 133 MHz Speed ns 6 7 Order Part No. Package IS42S16800D-6TL 54-Pin TSOPII, Lead-free IS42S16800D-6BL 54-ball BGA, Lead-free IS42S16800D-7TL 54-Pin TSOPII, Lead-free IC42S16800D-7TL 54-Pin TSOPII, Lead-free IS42S16800D-7BL 54-ball BGA, Lead-free IS42S16800D-75ETL 54-Pin TSOPII, Lead-free IS42S16800D-75EBL 54-ball BGA, Lead-free ORDERING INFORMATION - VDD = 3.3V Industrial Range -40°C to 85°C Frequency 143 MHz Speed ns Order Part No. IS42S81600D-7TLI Package 54-Pin TSOPII, Lead-free Frequency 166 MHz 143 MHz 143 MHz 133 MHz 133 MHz Speed ns 6 7 Order Part No. Package IS42S16800D-6TLI 54-Pin TSOPII, Lead-free IS42S16800D-7TLI 54-Pin TSOPII, Lead-free IS42S16800D-7BLI 54-ball BGA, Lead-free IS42S16800D-75ETLI 54-Pin TSOPII, Lead-free IS42S16800D-75EBLI 54-ball BGA, Lead-free Integrated Silicon Solution, Inc. 07/28/08 PACKAGING INFORMATION Mini Ball Grid Array Package Code B 54-Ball 123456789 54X 987654321 A1 SEATING PLANE mBGA - 8mm x 13mm MILLIMETERS Sym. Min. N0. Leads Typ. Max. 54 INCHES Min. Typ. Max. e E1 E Notes Controlling dimensions are in millimeters. mm Ball Pitch Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. 1-800-379-4774 PACKAGING INFORMATION Plastic TSOP 86-Pin Package Code T Type II N/2+1 E1 E Notes Controlling dimension millimieters, unless otherwise specified. BSC = Basic lead spacing between centers. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. Formed leads shall be planar with respect to one another within inches at the seating plane. SEATING PLANE Plastic TSOP T - Type II Millimeters |
More datasheets: IS42S16800D-6T | IS42S16800D-7TI | IS42S16800D-6T-TR | IS42S16800D-7T-TR | IS42S81600D-7TL | IS42S16800D-7TI-TR | IS42S81600D-6TL-TR | IS42S16800D-75ETL-TR | IS42S16800D-75ETLI-TR | IS42S16800D-75EBL-TR |
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