IRLB4132PbF
Part | Datasheet |
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IRLB4132PBF (pdf) |
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Approved Not Released PD - TBD IRLB4132PbF Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free VDSS G Gate Power MOSFET RDS on max Qg 36nC DS G TO-220AB D Drain S Source Absolute Maximum Ratings Parameter Drain-to-Source Voltage VGS ID TC = 25°C ID TC = 100°C ID TC = 25°C IDM PD = 25°C PD = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Package Limited c Pulsed Drain Current h Maximum Power Dissipation h Maximum Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter h Junction-to-Case Case-to-Sink, Flat Greased Surface g Junction-to-Ambient Max. 30 ± 20 f 150 100 78 620 140 68 -55 to + 175 300 1.6mm from case x 10lbfxin 1.1N m Typ. Max. 62 Units V W/°C Units °C/W |
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