IRGB4045DPBF

IRGB4045DPBF Datasheet

IRGB4045DPbF

Part	Datasheet
IRGB4045DPBF	IRGB4045DPBF (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of the parts tested for • Positive VCE on Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97269A IRGB4045DPbF n-channel VCES = 600V IC = 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE on typ. = 1.7V Gate TO-220AB Collector Emitter Absolute Maximum Ratings Parameter VCES TC = 25°C TC = 100°C ICM ILM IFM Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current c Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current d Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC =25° PD TC =100° TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance e Parameter Junction-to-Case - IGBT e Junction-to-Case - Diode Case-to-Sink, flat, greased surface e Junction-to-Ambient, typical socket mount Max. 600 12 18 24 ± 20 ± 30 77 39 -55 to + 175 Units V V W °C 300 in. 1.6mm from case Min. Typ. Max. 62 Units °C/W 01/28/2010 IRGB4045DPbF

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
• Low VCE on Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for
• Positive VCE on Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package

Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI

PD - 97269A

IRGB4045DPbF
n-channel

VCES = 600V IC = 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C

VCE on typ. = 1.7V

Gate

TO-220AB

Collector

Emitter

Absolute Maximum Ratings

Parameter

VCES TC = 25°C TC = 100°C ICM ILM IFM

Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current
c Pulsed Collector Current, VGE = 15V

Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current
d Diode Continuous Forward Current

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage

PD TC =25° PD TC =100° TJ TSTG

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Thermal Resistance
e Parameter

Junction-to-Case - IGBT
e Junction-to-Case - Diode

Case-to-Sink, flat, greased surface
e Junction-to-Ambient, typical socket mount

Max. 600 12 18 24 ± 20 ± 30 77 39
-55 to + 175

Units V

V W °C
300 in. 1.6mm from case

Min.

Typ.

Max. 62

Units °C/W
01/28/2010

IRGB4045DPbF

More datasheets: 73040000043 | 73040000045 | 73040000046 | 73040000044 | 73040000048 | 73040000049 | 73040000041 | 73040000040 | 73040000039 | 73040000042

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Datasheet ID: IRGB4045DPBF 639055