IRF7809TR

IRF7809TR Datasheet

The IRF7809/IRF7811 employs a newCopperStrapTM

Part	Datasheet
IRF7809TR	IRF7809TR (pdf)

Related Parts	Information
IRF7809	IRF7809
IRF7811	IRF7811
IRF7811TR	IRF7811TR

PDF Datasheet Preview
PD - 93812 PD - 93813 IIRRFF77880099//IIRRFF77881111 Provisional Datasheet • N-Channel Application-Specific MOSFETs Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications These new devices employ advanced Power SO-8 Top View MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of mobile microprocessors. DEVICE RATINGS The IRF7809/IRF7811 employs a newCopperStrapTM interconnect technology pioneered by International IRF7809 30V IRF7811 28V Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.5W 25°C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and RDS on QG Qsw Q nC 30 nC 11 23 nC 7 nC 31 nC reliability and reducing board space. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current VGS 4.5V Pulsed Drain T = 25°C A TL = 90°C Power Dissipation T = 25°C A TL = 90°C Junction & Storage Temperature Range Continuous Source Current Body Diode Pulsed Source Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead

PDF Datasheet Preview

PD - 93812 PD - 93813

IIRRFF77880099//IIRRFF77881111

Provisional Datasheet
• N-Channel Application-Specific MOSFETs Chipset for DC-DC Converters
• Ideal for CPU Core DC-DC Converters
• New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications

These new devices employ advanced Power

SO-8

Top View

MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest generation of mobile microprocessors.

DEVICE RATINGS

The IRF7809/IRF7811 employs a newCopperStrapTM
interconnect technology pioneered by International

IRF7809 30V

IRF7811 28V

Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3.5W 25°C ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and

RDS on QG Qsw Q
nC 30 nC
11 23 nC 7 nC 31 nC
reliability and reducing board space.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current VGS 4.5V Pulsed Drain

T = 25°C A

TL = 90°C

Power Dissipation

T = 25°C A

TL = 90°C

Junction & Storage Temperature Range

Continuous Source Current Body Diode

Pulsed Source

Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRF7809TR Datasheet file may be downloaded here without warranties.

Datasheet ID: IRF7809TR 639040