IRF7757TR

IRF7757TR Datasheet

IRF7757

Part	Datasheet
IRF7757TR	IRF7757TR (pdf)

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l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile < 1.2mm l Available in Tape & Reel l Common Drain Configuration Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile <1.2mm allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. VDSS PD - 94174 IRF7757 Power MOSFET RDS on max = 4.5V = 2.5V 4.8A 3.8A 1 2 3 4 1 = S1 2 = G1 3 = S2 4 = G2 8 7 6 5 8= D 7= D 6= D 5= D TSSOP-8 Absolute Maximum Ratings VDS ID TA = 25°C ID TA= 70°C IDM PD = 25°C PD = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 19 ± 12 -55 to + 150 Units V W mW/°C V °C Thermal Resistance Parameter Maximum Junction-to-Ambient Max. 105 Units °C/W 05/03/01 IRF7757 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td on tr td off tf Ciss Coss Crss Min. Typ. Max. Units

PDF Datasheet Preview

l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile < 1.2mm l Available in Tape & Reel l Common Drain Configuration

Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile <1.2mm allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

VDSS

PD - 94174

IRF7757

Power MOSFET

RDS on max
= 4.5V = 2.5V
4.8A 3.8A
1 2 3 4
1 = S1 2 = G1 3 = S2 4 = G2
8 7 6 5
8= D 7= D 6= D 5= D

TSSOP-8

Absolute Maximum Ratings

VDS ID TA = 25°C ID TA= 70°C IDM PD = 25°C PD = 70°C

VGS TJ, TSTG

Parameter Drain- Source Voltage Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range

Max. 20 19 ± 12
-55 to + 150

Units V

W mW/°C

V °C

Thermal Resistance

Parameter Maximum Junction-to-Ambient

Max. 105

Units °C/W
05/03/01

IRF7757

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance

VGS th gfs

Gate Threshold Voltage Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg Qgs Qgd td on tr td off tf Ciss Coss Crss

Min. Typ. Max. Units

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Datasheet ID: IRF7757TR 639039