IRF7707TRPBF

IRF7707TRPBF Datasheet

IRF7707PbF

Part	Datasheet
IRF7707TRPBF	IRF7707TRPBF (pdf)

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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile < 1.2mm l Available in Tape & Reel l Lead-Free VDSS -20V PD-96024A IRF7707PbF Power MOSFET RDS on max = -4.5V = -2.5V -7.0A -6.0A Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile <1.2mm allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB Absolute Maximum Ratings VDS ID TA = 25°C ID TA = 70°C IDM PD = 25°C PD = 70°C VGS TJ , TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS -4.5V Continuous Drain Current, VGS -4.5V Pulsed Drain Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range 'Ã2Ã9 &Ã2ÃT %Ã2ÃT TSSOP-8 Max. -20 -28 ±12 -55 to +150 Units V W/°C V °C Thermal Resistance Parameter Maximum Junction-to-Ambient Max. 83 Units °C/W 05/14/09 IRF7707PbF Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance -20 22 33 V/°C VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -7.0A VGS = -2.5V, ID = -6.0A VGS th Gate Threshold Voltage

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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile < 1.2mm l Available in Tape & Reel l Lead-Free

VDSS
-20V

PD-96024A

IRF7707PbF

Power MOSFET

RDS on max
= -4.5V = -2.5V
-7.0A -6.0A

Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile <1.2mm allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB

Absolute Maximum Ratings

VDS ID TA = 25°C ID TA = 70°C IDM PD = 25°C PD = 70°C

VGS TJ , TSTG

Parameter Drain-Source Voltage Continuous Drain Current, VGS -4.5V Continuous Drain Current, VGS -4.5V Pulsed Drain Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor

Gate-to-Source Voltage Junction and Storage Temperature Range
'Ã2Ã9 &Ã2ÃT %Ã2ÃT

TSSOP-8

Max. -20 -28 ±12 -55 to +150

Units V

W/°C V °C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max. 83

Units °C/W
05/14/09

IRF7707PbF

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance
-20 22 33

V/°C

VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -7.0A VGS = -2.5V, ID = -6.0A

VGS th

Gate Threshold Voltage

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Datasheet ID: IRF7707TRPBF 639038