IRF6631TRPBF

IRF6631TRPBF Datasheet

IRF6631PbF

Part	Datasheet
IRF6631TRPBF	IRF6631TRPBF (pdf)

Related Parts	Information
IRF6631TR1PBF	IRF6631TR1PBF

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PD - 97217 IRF6631PbF l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques IRF6631TRPbF DirectFET Power MOSFET Typical values unless otherwise specified VDSS RDS on RDS on 30V max ±20V max 10V 4.5V Qg tot Qgd Qgs2 Qoss Vgs th 12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline see p.7,8 for The IRF6631PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that are critical in synchronous buck converter’s CtrlFET sockets. Typical RDS on VGS, Gate-to-Source Voltage V Absolute Maximum Ratings Parameter Drain-to-Source Voltage VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS Gate-to-Source Voltage e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current 20 ID = 13A TJ = 125°C TJ = 25°C VGS, Gate -to -Source Voltage V Fig Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. Max. 30 ±20 13 10 57 100 13 10 Units ID= 10A VDS= 24V VDS= 15V QG Total Gate Charge nC Fig Typical Total Gate Charge vs Gate-to-Source Voltage - TC measured with thermocouple mounted to top Drain of part. Repetitive rating pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.24mH, RG = IAS = 10A.

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PD - 97217

IRF6631PbF
l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

IRF6631TRPbF

DirectFET Power MOSFET

Typical values unless otherwise specified

VDSS

RDS on

RDS on
30V max ±20V max 10V 4.5V

Qg tot Qgd

Qgs2

Qoss Vgs th
12nC 4.4nC 1.1nC 10nC 7.3nC 1.8V

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline see p.7,8 for

The IRF6631PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

The IRF6631PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6631PbF has been optimized for parameters that are critical in synchronous buck converter’s CtrlFET sockets.

Typical RDS on VGS, Gate-to-Source Voltage V

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS

Gate-to-Source Voltage
e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current
20 ID = 13A

TJ = 125°C

TJ = 25°C

VGS, Gate -to -Source Voltage V

Fig Typical On-Resistance vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Max.
30 ±20 13 10 57 100 13 10

Units

ID= 10A

VDS= 24V VDS= 15V

QG Total Gate Charge nC

Fig Typical Total Gate Charge vs Gate-to-Source Voltage
- TC measured with thermocouple mounted to top Drain of part. Repetitive rating pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.24mH, RG = IAS = 10A.

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Datasheet ID: IRF6631TRPBF 639035