IRF1405SPBF

IRF1405SPBF Datasheet

IRF1405SPbF IRF1405LPbF

Part	Datasheet
IRF1405SPBF	IRF1405SPBF (pdf)

Related Parts	Information
IRF1405STRRPBF	IRF1405STRRPBF
IRF1405LPBF	IRF1405LPBF
IRF1405STRLPBF	IRF1405STRLPBF

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Typical Applications l Industrial Motor Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Stripe Planar design of Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient PCB mount PD-95331A IRF1405SPbF IRF1405LPbF Power MOSFET VDSS = 55V RDS on = D2Pak IRF1405SPbF TO-262 IRF1405LPbF Max. 680 200 ± 20 590 See Fig.12a, 12b, 15, 16 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Units W/°C V mJ A mJ V/ns Typ. Max. 40 Units °C/W 07/14/10 IRF1405S/LPbF Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS RDS on VGS th gfs Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td on tr td off tf

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Typical Applications l Industrial Motor Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax

Stripe Planar design of Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Junction-to-Case Junction-to-Ambient PCB mount

PD-95331A

IRF1405SPbF IRF1405LPbF

Power MOSFET

VDSS = 55V

RDS on =

D2Pak IRF1405SPbF

TO-262 IRF1405LPbF

Max. 680 200
± 20 590 See Fig.12a, 12b, 15, 16
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Units

W/°C

V mJ A mJ V/ns

Typ.

Max. 40

Units °C/W
07/14/10

IRF1405S/LPbF

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V BR DSS RDS on VGS th gfs

Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg Qgs Qgd td on tr td off tf

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Datasheet ID: IRF1405SPBF 639028