IR2154

IR2154 Datasheet

IR2154

Part	Datasheet
IR2154	IR2154 (pdf)

Related Parts	Information
IR2154S	IR2154S

PDF Datasheet Preview
Preliminary Data Sheet No. PD60063I IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER Features • Integrated 600V half-bridge gate driver • 15.6V zener clamp on Vcc • True micropower start up • Tighter initial deadtime control • Low temperature coefficient deadtime • Shutdown feature 1/6th Vcc on CT pin • Increased undervoltage lockout Hysteresis 1V • Lower power level-shifting circuit • Constant LO, HO pulse widths at startup • Lower di/dt gate driver for better noise immunity • High side output in phase with RT • Excellent latch immunity on all inputs and outputs • ESD protection on all leads Product Summary VOFFSET Duty Cycle Tr/Tp Vclamp Deadtime typ. 600V max. 50% 80/40ns 15.6V µs Packages The IR2154 is an improved version of the popular IR2152 gate driver IC, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2154 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins. 8 Lead PDIP Typical Connection VCC VB 8 Lead SOIC 600V MAX Shutdown IR2154 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. VB VS VHO VLO VRT VCT ICC IRT dVs/dt PD RthJA TJ TS TL Definition High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage RT pin voltage CT pin voltage Supply current note 1 RT pin current Allowable offset voltage slew rate Maximum power dissipation TA +25°C 8 Lead DIP 8 Lead SOIC Thermal resistance, junction to ambient 8 Lead DIP 8 Lead SOIC Junction temperature Storage temperature Lead temperature soldering, 10 seconds Min. VB - 25 VS - -5 -50 -55 -55 Max. 625 VB + VB + VCC + VCC + VCC +

PDF Datasheet Preview

Preliminary Data Sheet No. PD60063I

IR2154

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features
• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature 1/6th Vcc on CT pin
• Increased undervoltage lockout Hysteresis 1V
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• High side output in phase with RT
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads

Product Summary VOFFSET Duty Cycle Tr/Tp Vclamp

Deadtime typ.
600V max. 50%
80/40ns 15.6V µs

Packages

The IR2154 is an improved version of the popular IR2152 gate driver IC, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2154 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
8 Lead PDIP

Typical Connection

VCC VB
8 Lead SOIC
600V MAX

Shutdown

IR2154

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

VB VS VHO VLO VRT VCT ICC IRT dVs/dt PD

RthJA

TJ TS TL

Definition

High side floating supply voltage

High side floating supply offset voltage

High side floating output voltage

Low side output voltage

RT pin voltage CT pin voltage Supply current note 1

RT pin current Allowable offset voltage slew rate

Maximum power dissipation TA +25°C 8 Lead DIP 8 Lead SOIC

Thermal resistance, junction to ambient
8 Lead DIP
8 Lead SOIC

Junction temperature

Storage temperature

Lead temperature soldering, 10 seconds

Min.

VB - 25 VS -
-5 -50 -55 -55

Max.
625 VB + VB + VCC + VCC + VCC +

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Datasheet ID: IR2154 639011