IR11662STRPBF

IR11662STRPBF Datasheet

IR11662S

Part	Datasheet
IR11662STRPBF	IR11662STRPBF (pdf)

Related Parts	Information
IR11662SPBF	IR11662SPBF

PDF Datasheet Preview
IR11662S ADVANCED SMARTRECTIFIERTM CONTROL IC • Secondary side high speed SR controller • DCM, CrCM flyback and Resonant half-bridge topologies • 200 V proprietary IC technology • Max 500 KHz switching frequency • Anti-bounce logic and UVLO protection • 4A peak turn off drive current • Micropower start-up & ultra low quiescent current • V gate drive clamp • 50ns turn-off propagation delay • Vcc range from V to 20 V • Direct sensing of MOSFET drain voltage • Enable function synchronized with MOSFET VDS transition • Cycle by Cycle MOT Check Circuit prevents multiple false trigger GATE pulses • Lead-free • Compatible with W Standby, Energy Star, CECP, etc. Product Summary Topology VD VOUT Io+ & I o- typ. Turn on Propagation Delay typ. Turn off Propagation Delay typ. Flyback, Resonant Half-bridge 200 V Clamped +1 A & -4 A 60 ns 50 ns Package Options • LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS 8-Lead SOIC Ordering Information Base Part Number Package Type IR11662S SOIC8N Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 2500 Complete Part Number IR11662SPBF IR11662STRPBF 1 2013 International Rectifier Nov 6, 2013 Typical Connection Diagram Vin Rs Cs Ci 1 VCC VGATE 8 2 OVT GND 7 3 MOT RMOT IIRR1111667162S IR11662S LOAD 2 2013 International Rectifier Nov 6, 2013 Table of Contents Ordering Information Description Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Input / Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Detailed Pin Description Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Qualification Information IR11662S 1 4 5 6 8 9 10 11 12 23 24 25 26 3 2013 International Rectifier Nov 6, 2013 IR11662S IR11662 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more paralleled NMOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes. 4 2013 International Rectifier Nov 6, 2013 IR11662S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VEN VD VS VGATE TJ TS R PD fsw Min. -1 -5 -3 -40 -55 Max. 20 200 20 150 128 970 500 Units V °C °C °C/W mW kHz Remarks VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Definition Supply voltage Drain Sense Voltage Junction Temperature Switching Frequency † VD -3V negative spike width Min. -3 -25 --- Max. 18 200 125 500 Units °C kHz Recommended Component Values Symbol RMOT Component MOT pin resistor value Min. 5 Max. 75 Units 5 2013 International Rectifier Nov 6, 2013

PDF Datasheet Preview

IR11662S

ADVANCED SMARTRECTIFIERTM CONTROL IC
• Secondary side high speed SR controller
• DCM, CrCM flyback and Resonant half-bridge
topologies
• 200 V proprietary IC technology
• Max 500 KHz switching frequency
• Anti-bounce logic and UVLO protection
• 4A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• V gate drive clamp
• 50ns turn-off propagation delay
• Vcc range from V to 20 V
• Direct sensing of MOSFET drain voltage
• Enable function synchronized with MOSFET VDS
transition
• Cycle by Cycle MOT Check Circuit prevents
multiple false trigger GATE pulses
• Lead-free
• Compatible with W Standby, Energy Star,

CECP, etc.

Product Summary

Topology

VD VOUT Io+ & I o- typ. Turn on Propagation Delay typ. Turn off Propagation Delay typ.

Flyback, Resonant Half-bridge 200 V Clamped +1 A & -4 A
60 ns
50 ns

Package Options
• LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS
8-Lead SOIC
Ordering Information

Base Part Number

Package Type

IR11662S

SOIC8N

Standard Pack

Form Tube/Bulk Tape and Reel

Quantity 95
2500

Complete Part Number

IR11662SPBF IR11662STRPBF
1 2013 International Rectifier

Nov 6, 2013

Typical Connection Diagram

Vin Rs

Cs Ci
1 VCC VGATE 8
2 OVT GND 7
3 MOT

RMOT

IIRR1111667162S

IR11662S

LOAD
2 2013 International Rectifier

Nov 6, 2013

Table of Contents
Ordering Information Description Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Input / Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Detailed Pin Description Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Qualification Information

IR11662S
1 4 5 6 8 9 10 11 12 23 24 25 26
3 2013 International Rectifier

Nov 6, 2013

IR11662S

IR11662 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more paralleled NMOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes.
4 2013 International Rectifier

Nov 6, 2013

IR11662S

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency

Symbol VCC VEN VD VS VGATE TJ TS R PD fsw

Min. -1 -5 -3 -40 -55

Max. 20 200 20 150 128 970 500

Units V °C °C
°C/W mW kHz

Remarks

VCC=20V, Gate off SOIC-8 SOIC-8, TAMB=25°C

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Definition

Supply voltage

Drain Sense Voltage

Junction Temperature

Switching Frequency
† VD -3V negative spike width

Min.
-3 -25 ---

Max. 18 200 125 500

Units
°C kHz

Recommended Component Values

Symbol RMOT

Component MOT pin resistor value

Min. 5

Max. 75

Units
5 2013 International Rectifier

Nov 6, 2013

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IR11662STRPBF Datasheet file may be downloaded here without warranties.

Datasheet ID: IR11662STRPBF 639009