TDA21101G

TDA21101G Datasheet

TDA21101

Part	Datasheet
TDA21101G	TDA21101G (pdf)

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Preliminary Data Sheet High speed Driver with bootstrapping for dual Power MOSFETs TDA21101 P-DSO-8 • Fast rise and fall times for frequencies up to 2 MHz • Capable of sinking and sourcing of more than 4 A peak current for lowest switching losses • Charges High Side internally clamped to 10 V and Low Side gates up to 12 V for lowest on-losses • Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin for optimizing ON losses, gate drive losses, and switching losses • Integrates the bootstrap diode for reducing the part count • Prevents from cross-conducting by adaptive gate drive control • Protects the driver against over-temperature • Supports shut-down mode for very low quiescent current through three-state input • Compatible to standard PWM controller ICs • Floating High Side MOSFET drive up to 30 V • Operates with V PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage • 1:1 compatible to HIP6601A and HIP6601B • Ideal for multi-phase Desktop CPU supplies on motherboards and Notebook CPU supplies Type Package TDA21101 P-DSO-8 Marking 21101G Ordering Code Q67042-S4170-A101 Pinout Top View GATEHS 1 BOOT 2 PWM 3 GND 4 8 PHASE 7 PVCC 6 VCC 5 GATELS Number Name GATEHS BOOT GATELS PVCC PHASE Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage High impedance input to adjust the High Side gate drive This pin connects to the junction of the High Side and the Low Side MOSFET 2002-03-28 Preliminary Data Sheet TDA21101 The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to HIP6601. In addition it provides several protection features as well as a shut down mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications. Target application The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and but also in motor drive and class-D amplifier type applications. Absolute Maximum Ratings At Tj = 25 °C, unless otherwise specified Parameter Voltage supplied to ‘VCC’ pin Voltage supplied to ‘PVCC’ pin Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ clamped by the TDA21101 to 10 V when PVCC > 10 V Voltage rating at ‘PHASE’ pin, DC Junction temperature Storage temperature ESD Rating Human Body Model IEC climatic category DIN EN 60068-1 VVCC VPVCC VPWM VBOOT VPHASE TJ TS Value Unit Min. Max. 20 10 V -15 30 150 °C -55 150 4 kV 55/150/56 - Thermal Characteristic Parameter Thermal resistance, junction-soldering point Thermal resistance, junction-ambient Values Unit Min. Typ. Max. 2002-03-28 Preliminary Data Sheet TDA21101

PDF Datasheet Preview

Preliminary Data Sheet

High speed Driver with bootstrapping for dual Power MOSFETs

TDA21101

P-DSO-8
• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking and sourcing of more than 4 A peak current for lowest
switching losses
• Charges High Side internally clamped to 10 V and Low Side gates
up to 12 V for lowest on-losses
• Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin for optimizing ON losses, gate drive losses, and switching losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• Protects the driver against over-temperature
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs
• Floating High Side MOSFET drive up to 30 V
• Operates with V PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage
• 1:1 compatible to HIP6601A and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and

Notebook CPU supplies

Type

Package

TDA21101 P-DSO-8

Marking 21101G
Ordering Code Q67042-S4170-A101

Pinout

Top View

GATEHS 1 BOOT 2 PWM 3 GND 4
8 PHASE 7 PVCC 6 VCC 5 GATELS

Number Name

GATEHS

BOOT

GATELS

PVCC

PHASE

Gate drive output for the N-Channel High side MOSFET

Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET

Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET

Supply voltage High impedance input to adjust the High Side gate drive

This pin connects to the junction of the High Side and the Low Side MOSFET
2002-03-28

Preliminary Data Sheet

TDA21101

The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to HIP6601. In addition it provides several protection features as well as a shut down mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications.

Target application

The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and but also in motor drive and class-D amplifier type applications.

Absolute Maximum Ratings

At Tj = 25 °C, unless otherwise specified

Parameter

Voltage supplied to ‘VCC’ pin Voltage supplied to ‘PVCC’ pin Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ clamped by the TDA21101 to 10 V when PVCC > 10 V Voltage rating at ‘PHASE’ pin, DC Junction temperature Storage temperature ESD Rating Human Body Model IEC climatic category DIN EN 60068-1

VVCC VPVCC VPWM VBOOT VPHASE

TJ TS

Value Unit Min. Max.
20 10 V
-15 30 150 °C
-55 150 4 kV
55/150/56 -

Thermal Characteristic Parameter

Thermal resistance, junction-soldering point Thermal resistance, junction-ambient

Values

Unit

Min. Typ. Max.
2002-03-28

Preliminary Data Sheet

TDA21101

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Datasheet ID: TDA21101G 638692