SPI21N50C3HKSA1
SPI21N50C3HKSA1 Datasheet
SPP21N50C3 SPI21N50C3, SPA21N50C3
| Part | Datasheet |
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SPI21N50C3HKSA1 |
SPI21N50C3HKSA1 (pdf) |
| Related Parts | Information |
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SPP21N50C3XKSA1 |
SPP21N50C3XKSA1 |
| PDF Datasheet Preview |
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| SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor VDS Tjmax 560 RDS on PG-TO220FP P G-TO262 PG-TO220 Type SPP21N50C3 SPI21N50C3 SPA21N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4565 Q67040-S4564 SP000216364 Marking 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2 ID=21A, VDD=50V ID puls EAS IAR VGS Ptot Tj , Tstg dv/dt Value SPP_I 21 63 690 63 690 ±20 ±20 ±30 ±30 Unit A A V W °C V/ns 2009-12-22 SPP21N50C3 SPI21N50C3, SPA21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s 4 Symbol dv/dt Value 50 Unit V/ns RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold Values Unit min. typ. max. - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit |
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