SPI11N60C3HKSA1

SPI11N60C3HKSA1 Datasheet

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Part	Datasheet
SPI11N60C3HKSA1	SPI11N60C3HKSA1 (pdf)

Related Parts	Information
SPA11N60C3XKSA1	SPA11N60C3XKSA1

PDF Datasheet Preview
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS Tjmax RDS on ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute 650 V 11 A PG-TO220 Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220 11N60C3 Maximum Ratings Parameter Value SPP_I Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2 ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static ID puls EAS IAR VGS Ptot Tj , Tstg dv/dt ±20 ±20 ±30 ±30 Unit A A V W °C V/ns 2009-11-27 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s 4 Symbol dv/dt Value 50 Unit V/ns RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold Values Unit min. typ. max. 1 K/W

PDF Datasheet Preview

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Cool MOS Power Transistor

VDS Tjmax RDS on ID
• Periodic avalanche rated

PG-TO220FP PG-TO262
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
23 1 P-TO220-3-31
• PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute
650 V 11 A

PG-TO220

Type

Package
Ordering Code Marking

SPP11N60C3

PG-TO220 Q67040-S4395 11N60C3

SPI11N60C3

PG-TO262 Q67042-S4403 11N60C3

SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220
11N60C3

Maximum Ratings

Parameter

Value

SPP_I

Continuous drain current

TC = 25 °C TC = 100 °C

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2

ID=11A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static

ID puls EAS

IAR VGS Ptot Tj , Tstg dv/dt
±20
±20
±30
±30

Unit A

A V W °C V/ns
2009-11-27

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Maximum Ratings Parameter Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics Parameter

Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s 4

Symbol dv/dt

Value 50

Unit V/ns

RthJC RthJC_FP RthJA RthJA_FP RthJA

Tsold

Values

Unit
min. typ. max.
1 K/W

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Datasheet ID: SPI11N60C3HKSA1 638663