SPU30N03S2L-10
SPU30N03S2L-10 Datasheet
SPU30N03S2L-10
| Part | Datasheet |
|---|---|
SPU30N03S2L-10 |
SPU30N03S2L-10 (pdf) |
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| OptiMOS Power-Transistor N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS on product FOM thermal resistance operating temperature Avalanche rated dv/dt rated for fast switching applications SPU30N03S2L-10 Product Summary RDS on P-TO251 Type Package SPU30N03S2L-10 P-TO251 Ordering Code Q67042-S4042 Marking 2N03L10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C,1 TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25 ID puls EAS dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value 30 120 ±20 82 +175 55/175/56 Unit A mJ kV/µs V W °C 2004-08-10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 2 SPU30N03S2L-10 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 30 |
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