SPS01N60C3

SPS01N60C3 Datasheet

SPS01N60C3

Part	Datasheet
SPS01N60C3	SPS01N60C3 (pdf)

PDF Datasheet Preview
Cool MOS Power Transistor SPS01N60C3 VDS Tjmax 650 RDS on PG-TO251-3-11 Type SPS01N60C3 Package Ordering Code PG-TO251-3-11 - Marking 01N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1 EAR ID = A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage static Gate source voltage AC f >1Hz Power dissipation, TC = 25°C Ptot Tj , Tstg dv/dt Value ±20 ±30 11 +150 15 Unit A A V W °C V/ns 2008-04-07 SPS01N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 2 Soldering temperature, wavesoldering mm in. from case for 10s Symbol dv/dt Value 50 Unit V/ns RthJC RthJA Tsold Values Unit min. typ. max. 11 K/W - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified

PDF Datasheet Preview

Cool MOS Power Transistor

SPS01N60C3

VDS Tjmax 650

RDS on

PG-TO251-3-11

Type SPS01N60C3

Package
Ordering Code

PG-TO251-3-11 -

Marking 01N60C3

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

ID = A, VDD = 50 V

Avalanche energy, repetitive tAR limited by Tjmax1 EAR

ID = A, VDD = 50 V

Avalanche current, repetitive tAR limited by Tjmax IAR

Gate source voltage static

Gate source voltage AC f >1Hz

Power dissipation, TC = 25°C

Ptot

Tj , Tstg dv/dt

Value
±20 ±30 11 +150 15

Unit A

A V W °C V/ns
2008-04-07

SPS01N60C3

Maximum Ratings Parameter Drain Source voltage slope

VDS = 480 V, ID = A, Tj = 125 °C

Thermal Characteristics Parameter

Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 2 Soldering temperature, wavesoldering mm in. from case for 10s

Symbol dv/dt

Value 50

Unit V/ns

RthJC RthJA

Tsold

Values

Unit
min. typ. max.
11 K/W
- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPS01N60C3 Datasheet file may be downloaded here without warranties.

Datasheet ID: SPS01N60C3 638655