SPP20N60S5XKSA1
SPP20N60S5XKSA1 Datasheet
SPP20N60S5
| Part | Datasheet |
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SPP20N60S5XKSA1 |
SPP20N60S5XKSA1 (pdf) |
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| Cool MOS Power Transistor SPP20N60S5 VDS RDS on 600 V 20 A PG-TO220 P-TO220-3-1 Type SPP20N60S5 Package PG-TO220 Ordering Code Q67040-S4751 Marking 20N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1 EAR ID = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC f >1Hz Power dissipation, TC = 25°C Operating and storage temperature IAR VGS Ptot Tj , Tstg Value Unit ±20 ±30 +150 2009-12-01 SPP20N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 20 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case SMD version, device on PCB min. footprint 6 cm2 cooling area 2 Soldering temperature, wavesoldering mm in. from case for 10s Symbol RthJC RthJA Tsold Values Unit min. typ. max. - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values |
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