SPP08P06PBKSA1

SPP08P06PBKSA1 Datasheet

SPP08P06P SPB08P06P

Part	Datasheet
SPP08P06PBKSA1	SPP08P06PBKSA1 (pdf)

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Preliminary data SPP08P06P SPB08P06P Power-Transistor Product Summary • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated Drain source voltage -60 V Drain-source on-state resistance RDS on W Continuous drain current • 175°C operating temperature Type SPP08P06P SPB08P06P Package Ordering Code P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse ID = A , VDD = -25 V, RGS = 25 W EAR dv/dt IS = A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation Ptot TC = 25 °C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Pin 1 PIN 2/4 PIN 3 Value Unit A mJ kV/µs ±20 55/175/56 1999-11-22 Preliminary data SPP08P06P SPB08P06P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = -250 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 150 °C V BR DSS -60

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Preliminary data

SPP08P06P SPB08P06P

Power-Transistor

Product Summary
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated

Drain source voltage
-60 V

Drain-source on-state resistance RDS on W

Continuous drain current
• 175°C operating temperature

Type SPP08P06P SPB08P06P
Package Ordering Code P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current TC = 25 °C

ID puls

Avalanche energy, single pulse

ID = A , VDD = -25 V, RGS = 25 W

EAR dv/dt

IS = A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C

Gate source voltage

Power dissipation

Ptot

TC = 25 °C

Operating and storage temperature IEC climatic category DIN IEC 68-1

Tj , Tstg

Pin 1 PIN 2/4 PIN 3

Value

Unit A
mJ kV/µs
±20
55/175/56
1999-11-22

Preliminary data

SPP08P06P SPB08P06P

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB min. footprint 6 cm2 cooling area 1

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Drain- source breakdown voltage VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = -250 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 150 °C

V BR DSS -60

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Datasheet ID: SPP08P06PBKSA1 638650