SPB100N04S2-04

SPB100N04S2-04 Datasheet

SPP100N04S2-04 SPB100N04S2-04

Part	Datasheet
SPB100N04S2-04	SPB100N04S2-04 (pdf)

Related Parts	Information
SPP100N04S2-04	SPP100N04S2-04

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Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP100N04S2-04 SPB100N04S2-04 Product Summary RDS on max. SMD version 100 A P- TO263 -3-2 P- TO220 -3-1 Type SPP100N04S2-04 SPB100N04S2-04 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6040 Q67060-S6041 Marking PN0404 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 , VDD=25V, IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS dv/dt VGS Ptot Tj , Tstg Value 100 400 ±20 300 +175 55/175/56 Unit A mJ kV/µs V W °C 2003-05-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 2 SPP100N04S2-04 SPB100N04S2-04 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 40 VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS

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Power-Transistor

Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPP100N04S2-04 SPB100N04S2-04

Product Summary

RDS on max. SMD version
100 A

P- TO263 -3-2

P- TO220 -3-1

Type SPP100N04S2-04 SPB100N04S2-04

Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6040 Q67060-S6041

Marking PN0404

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 , VDD=25V,

IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls EAS dv/dt

VGS Ptot Tj , Tstg

Value
100 400
±20 300
+175 55/175/56

Unit A
mJ kV/µs V W °C
2003-05-08

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 2

SPP100N04S2-04 SPB100N04S2-04

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V BR DSS 40

VGS=0V, ID=1mA

Gate threshold voltage, VGS = VDS

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Datasheet ID: SPB100N04S2-04 638648