SPN02N60C3 E6433
SPN02N60C3 E6433 Datasheet
SPN02N60C3
| Part | Datasheet |
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SPN02N60C3 E6433 |
SPN02N60C3 E6433 (pdf) |
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SPN02N60C3 |
SPN02N60C3 |
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| CoolMOSTM Power Transistor Product Summary V DS T j,max R DS on ,max ID SPN02N60C3 650 V A SOT223 Type SPN02N60C3 Package SOT223 Ordering Code Marking Q67040-S4553 02N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1 Avalanche energy, single pulse Avalanche energy, repetitive 1 ,2 AR Avalanche current, repetitive I D,pulse E AS E AR I AR T A=25 °C T A=70 °C T A=25 °C I D=0.9 A, V DD=50 V I D=1.8 A, V DD=50 V Drain source voltage slope dv /dt I D=1.8 A, V DS=480 V, T j=125 °C Gate source voltage Power dissipation Operating and storage temperature static AC f >1 Hz P tot T A=25 °C T j, T stg Value 50 ±20 ±30 -55 150 Unit A mJ A V/ns V W °C 2005-02-21 Parameter Thermal characteristics Thermal resistance, junction soldering point Thermal resistance, junction ambient Soldering temperature Symbol Conditions SPN02N60C3 min. Values typ. Unit max. R thJS |
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