SPN01N60C3
SPN01N60C3 Datasheet
SPN01N60C3
| Part | Datasheet |
|---|---|
SPN01N60C3 |
SPN01N60C3 (pdf) |
| PDF Datasheet Preview |
|---|
| Cool MOS Power Transistor SPN01N60C3 VDS Tjmax 650 V RDS on SOT-223 VPS05163 Type SPN01N60C3 Package SOT-223 Ordering Code Q67040-S4208 Marking 01N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC f >1Hz Power dissipation, TA = 25°C Operating and storage temperature Symbol ID ID puls VGS Ptot Tj , Tstg Value Unit ±20 ±30 +150 2005-02-21 SPN01N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Soldering temperature, mm in. from case for 10s Symbol RthJS RthJA Tsold Values Unit min. typ. max. - K/W - 110 75 - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V BR DSS VGS=0V, ID=0.25mA 600 Drain-Source avalanche V BR DS VGS=0V, ID=0.8A - 700 |
| More datasheets: M20-7842546 | M20-7842642 | M20-7842646 | M20-7842742 | M20-7841146 | FTEC-30114-I04 | MK5814GLFTR | MK5814GLF | MK5814SLF | MK5814SLFTR |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPN01N60C3 Datasheet file may be downloaded here without warranties.