SPI100N03S2-03

SPI100N03S2-03 Datasheet

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03

Part	Datasheet
SPI100N03S2-03	SPI100N03S2-03 (pdf)

Related Parts	Information
SPB100N03S2-03	SPB100N03S2-03
SPP100N03S2-03	SPP100N03S2-03

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Power-Transistor • N-Channel • Enhancement mode • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Product Summary RDS on max. SMD version 100 A P- TO263 -3-2 P- TO220 -3-1 Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116 Marking PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 100 400 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 30

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Power-Transistor
• N-Channel
• Enhancement mode
• Excellent Gate Charge x RDS on product FOM
• Superior thermal resistance

P- TO262 -3-1
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03

Product Summary

RDS on max. SMD version
100 A

P- TO263 -3-2

P- TO220 -3-1

Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03

Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116

Marking PN0303

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80A, VDD=25V,

IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

Value
100 400
±20 300
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-09

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V BR DSS 30

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Datasheet ID: SPI100N03S2-03 638635