SPP80N06S2-09

SPP80N06S2-09 Datasheet

SPP80N06S2-09 SPB80N06S2-09

Part	Datasheet
SPP80N06S2-09	SPP80N06S2-09 (pdf)

Related Parts	Information
SPB80N06S2-09	SPB80N06S2-09

PDF Datasheet Preview
Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP80N06S2-09 SPB80N06S2-09 Product Summary RDS on P- TO263 -3-2 P- TO220 -3-1 Type SPP80N06S2-09 SPB80N06S2-09 Package Ordering Code P- TO220 -3-1 Q67060-S6025 P- TO263 -3-2 Q67060-S6027 Marking 2N0609 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 80 70 320 ±20 190 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPP80N06S2-09 SPB80N06S2-09 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max.

PDF Datasheet Preview

Power-Transistor

Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPP80N06S2-09 SPB80N06S2-09

Product Summary

RDS on

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N06S2-09 SPB80N06S2-09

Package
Ordering Code

P- TO220 -3-1 Q67060-S6025

P- TO263 -3-2 Q67060-S6027

Marking 2N0609

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAR dv/dt

VGS Ptot

Tj , Tstg

Value
80 70 320
±20 190
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-09

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPP80N06S2-09 SPB80N06S2-09

Values

Unit
min. typ. max.

RthJC RthJA
- K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPP80N06S2-09 Datasheet file may be downloaded here without warranties.

Datasheet ID: SPP80N06S2-09 638627