SPP80N06S2L-11
SPP80N06S2L-11 Datasheet
SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11
| Part | Datasheet |
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SPP80N06S2L-11 |
SPP80N06S2L-11 (pdf) |
| Related Parts | Information |
|---|---|
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SPB80N06S2L-11 |
SPB80N06S2L-11 |
SPI80N06S2L-11 |
SPI80N06S2L-11 |
| PDF Datasheet Preview |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11 Product Summary RDS on P- TO263 -3-2 P- TO220 -3-1 Type Package Ordering Code SPP80N06S2L-11 P- TO220 -3-1 Q67060-S6035 SPB80N06S2L-11 P- TO263 -3-2 Q67060-S6036 SPI80N06S2L-11 P- TO262 -3-1 Q67060-S6181 Marking 2N06L11 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C 1 TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, ID puls EAR dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation VGS Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value 80 58 320 ±20 158 +175 55/175/56 Unit A kV/µs V W °C 2004-11-02 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values |
| More datasheets: 76422.18.07 | 76422.18.05 | 76422.18.04 | 76422.18.02 | 76422.18.01 | 76422.18.03 | 76422.18.08 | LTL1CHKRK | SPB80N06S2L-11 | SPI80N06S2L-11 |
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