SIDC24D30SIC3

SIDC24D30SIC3 Datasheet

SIDC24D30SIC3

Part	Datasheet
SIDC24D30SIC3	SIDC24D30SIC3 (pdf)

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SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • SMPS, snubber, secondary side Silicon Carbide rectification • Switching behavior benchmark • No temperature influence on the switching behavior • No forward recovery Chip Type SIDC24D30SIC3 VBR IF Die Size Package Ordering Code 300V 10A x mm2 sawn on foil Q67050-A4163A103 MECHANICAL PARAMETER Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x x / mm mm2 1649 pcs Photoimide 3200 nm Al 1400 nm Ni Ag suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, 350µm mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, SIDC24D30SIC3 Maximum Ratings Parameter Condition VRRM VRSM Continuous forward current limited by Tjmax Single pulse forward current depending on wire bond configuration IF IFSM Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current I FRM IFMAX Operating junction and storage temperature Tj , Tstg TC =25° C, tP =10 ms sinusoidal TC = 100° C, Tj= 1 5 0 ° C, D=0.1 TC =25° C, tp=10µs Value 300 10 45 100 Unit V A Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions

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SIDC24D30SIC3

Silicon Carbide Schottky Diode

FEATURES:

Applications:
• SMPS, snubber, secondary side

Silicon Carbide
rectification
• Switching behavior benchmark
• No temperature influence on the switching
behavior
• No forward recovery

Chip Type SIDC24D30SIC3

VBR IF

Die Size
Package Ordering Code
300V 10A
x mm2
sawn on foil

Q67050-A4163A103

MECHANICAL PARAMETER Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization

Cathode metalization

Die bond Wire bond Reject Ink Dot Size

Recommended Storage Environment
1.706x x /
mm mm2
1649 pcs

Photoimide
3200 nm Al
1400 nm Ni Ag suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Al, 350µm
mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, AI PS DD HV3, Edition 1,

SIDC24D30SIC3

Maximum Ratings

Parameter

Condition

VRRM

VRSM

Continuous forward current limited by Tjmax Single pulse forward current
depending on wire bond configuration

IF IFSM

Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current

I FRM IFMAX

Operating junction and storage temperature

Tj , Tstg

TC =25° C, tP =10 ms sinusoidal

TC = 100° C, Tj= 1 5 0 ° C, D=0.1

TC =25° C, tp=10µs

Value 300 10
45 100

Unit V A

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter

Conditions

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Datasheet ID: SIDC24D30SIC3 638576