SIDC01D120H6
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SIDC01D120H6 (pdf) |
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SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES • 1200V EMCON technology 120 µm chip • soft, fast switching This chip is used for: • EUPEC power modules and discrete devices • small temperature coefficient Applications: • SMPS, resonant applications, drives Chip Type SIDC01D120H6 Die Size 1200V 0.6A x mm2 Package Ordering Code sawn on foil Q67050-A4171A001 MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11812 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 250µm mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4002S, Edition 1, SIDC01D120H6 Maximum Ratings Parameter VRRM Continuous forward current limited by Tjmax Single pulse forward current depending on wire bond configuration IF IFSM Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature I FRM Tj , Tstg Condition tP = 10 ms sinusoidal Value Unit 1200 A tbd Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value Unit min. Typ. max. Cathode -Anode breakdown Voltage VR=1200V IR= m A Tj=25 °C Tj=25°C 1200 27 µA V Forward voltage drop |
More datasheets: IDT2309B-1DC8 | IDT2309B-1HDC | IDT2309B-1HDC8 | IDT2309B-1HDCI | IDT2309B-1HDCI8 | IDT2309B-1HPG8 | IDT2309B-1HPGI8 | 1731120042 | 1727040148 | 585DX4Q25F103SP |
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