SGB06N60ATMA1
SGB06N60ATMA1 Datasheet
SGB06N60
| Part | Datasheet |
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SGB06N60ATMA1 |
SGB06N60ATMA1 (pdf) |
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| SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC2 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : PG-TO-263-3-2 TO-263AB Type SGB06N60 VCE 600V IC VCE sat 150°C 2.3V 150°C Marking Package G06N60 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C Short circuit withstand time1 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature reflow soldering, MSL1 Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value 600 12 24 ±20 34 Unit V A µs W °C 2 J-STD-020 and JESD-022 1 Allowed number of short circuits <1000 time between short circuits >1s. SGB06N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient1 Symbol RthJC RthJA Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current |
| More datasheets: M85049/11-08W | M85049/11-37W | M85049/11-42W | M85049/11-152W | M85049/11-31S | M85049/11-73W | M85049/11-77W | M85049/11-63W | MS3437B75N | MS3437B05N |
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