SDP06S60 SDT06S60
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SDP06S60 (pdf) |
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the switching behavior • Ideal diode for Power Factor Correction up to 1200W1 • No forward recovery SDP06S60 SDT06S60 SiC Schottky Diode Product Summary VRRM 600 V 21 nC PG-TO220-2-2. P-TO220 Type SDP06S60 SDT06S60 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-S4371 Q67040-S4446 Marking D06S60 Pin 1 n.c. C Pin 2 C A Pin 3 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz IF IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Ptot Operating and storage temperature Tj , Tstg Value Unit +175 2008-06-02 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SDP06S60 SDT06S60 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C VR=600V, Tj=25°C VR=600V, Tj=150°C |
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