SDB06S60

SDB06S60 Datasheet


SDB06S60

Part Datasheet
SDB06S60 SDB06S60 SDB06S60 (pdf)
PDF Datasheet Preview
the switching behavior
• Ideal diode for Power Factor

Correction up to 1200W1
• No forward recovery

SDB06S60

SiC Schottky Diode

Product Summary

VRRM
600 V
21 nC

D2PAK

Type SDB06S60

Package D2PAK
Ordering Code Q67040-S4370

Marking Pin 1 Pin 2 Pin 3

D06S60 n.c.

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous forward current, TC=100°C RMS forward current, f=50Hz

IF IFRMS

Surge non repetitive forward current, sine halfwave IFSM

TC=25°C, tp=10ms

Repetitive peak forward current

IFRM

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current

IFMAX
tp=10µs, TC=25°C

VRRM

VRSM Ptot

Operating and storage temperature

Tj , Tstg

Value 6
600 +175

Unit A

V W °C
2005-02-17

SDB06S60

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:

P-TO263-3-2 min. footprint P-TO263-3-2 6 cm2 cooling area 2 P-TO252-3-1 min. footprint P-TO252-3-1 6 cm2 cooling area 2

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Diode forward voltage

IF=6A, Tj=25°C IF=6A, Tj=150°C

VR=600V, Tj=25°C VR=600V, Tj=150°C
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Datasheet ID: SDB06S60 638537