SDB06S60
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SDB06S60 (pdf) |
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the switching behavior • Ideal diode for Power Factor Correction up to 1200W1 • No forward recovery SDB06S60 SiC Schottky Diode Product Summary VRRM 600 V 21 nC D2PAK Type SDB06S60 Package D2PAK Ordering Code Q67040-S4370 Marking Pin 1 Pin 2 Pin 3 D06S60 n.c. Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz IF IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Ptot Operating and storage temperature Tj , Tstg Value 6 600 +175 Unit A V W °C 2005-02-17 SDB06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2 min. footprint P-TO263-3-2 6 cm2 cooling area 2 P-TO252-3-1 min. footprint P-TO252-3-1 6 cm2 cooling area 2 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C VR=600V, Tj=25°C VR=600V, Tj=150°C |
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