PTFB191501EV1R250XTMA1

PTFB191501EV1R250XTMA1 Datasheet

PTFB191501E PTFB191501F

Part	Datasheet
PTFB191501EV1R250XTMA1	PTFB191501EV1R250XTMA1 (pdf)

Related Parts	Information
PTFB191501EV1XWSA1	PTFB191501EV1XWSA1
PTFB191501FV1XWSA1	PTFB191501FV1XWSA1
PTFB191501FV1R250XTMA1	PTFB191501FV1R250XTMA1

PDF Datasheet Preview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 1990 MHz PTFB191501E PTFB191501F The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs PTFB191501E designed for single- and two-carrier WCDMA and CDMA applications Package H-36248-2 from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS ts process, these devices provide excellent thermal performance and superior reliability. PTFB191501F Package H-37248-2 duc Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = A, = 1990 MHz, 3GPP WCDMA, o PAR = 8 dB, 10 MHz carrier spacing, BW MHz r -20 p -25 Efficiency d -30 IMD Up e -35 u -40 tin IMD Low ACPR n -60 o 31 33 35 37 39 41 43 45 47 49 c Output Power dBm IMD dBc Efficiency % dis RF Characteristics • Broadband internal matching • Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 35 W - Linear gain = 18 dB - Efficiency = 30% - Intermodulation distortion = dBc • Typical CW performance, 1990 MHz, 30 V - Output power at = 150 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 150 W CW output power • Pb-free, RoHS-compliant Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 35 W average, = 1985 MHz, = 1995 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Ordering Information Type and Version PTFB191501E V1 PTFB191501E V1 R250 PTFB191501F V1 PTFB191501F V1 R250 Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs Data Sheet 2 of 15 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFB191501E PTFB191501F Drain Efficiency % Drain Efficiency % Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW MHz Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = A, = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW MHz -25 1990 MHz Low 1990 MHz Up 1960 MHz Low ts -35 1960 MHz Up 1930 MHz Low 1930 MHz Up Gain dB c -45 u -50 d -55 ro -60 31 33 35 37 39 41 43 45 47 49 p Output Power dBm Gain Efficiency 31 33 35 37 39 41 43 45 47 49 Output Power dBm ued CW Power Sweep tin Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 1990 MHz co 19 Gain is 18 Two-tone Broadband Performance VDD = 30 V, IDQ = A, POUT = 63 W Efficiency IMD3 Drain Efficiency % Gain / Efficiency dB / % Efficiency 25 15

PDF Datasheet Preview

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 1990 MHz

PTFB191501E PTFB191501F

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs PTFB191501E
designed for single- and two-carrier WCDMA and CDMA applications Package H-36248-2
from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS
ts process, these devices provide excellent thermal performance and
superior reliability.

PTFB191501F Package H-37248-2
duc Two-carrier WCDMA Drive-up

VDD = 30 V, IDQ = A, = 1990 MHz, 3GPP WCDMA,
o PAR = 8 dB, 10 MHz carrier spacing, BW MHz
r -20
p -25

Efficiency
d -30

IMD Up
e -35
u -40
tin IMD Low

ACPR
n -60
o 31 33 35 37 39 41 43 45 47 49
c Output Power dBm

IMD dBc Efficiency %
dis RF Characteristics
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 35 W - Linear gain = 18 dB - Efficiency = 30% - Intermodulation distortion = dBc
• Typical CW performance, 1990 MHz, 30 V - Output power at = 150 W - Efficiency = 55%
• Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 30 V, 150 W CW output power
• Pb-free, RoHS-compliant

Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 35 W average, = 1985 MHz, = 1995 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ

Unit dB % dBc

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!
Ordering Information

Type and Version PTFB191501E V1 PTFB191501E V1 R250 PTFB191501F V1 PTFB191501F V1 R250

Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended

Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs

Data Sheet
2 of 15

Confidential, Limited Internal Distribution

Typical Performance data taken in a production test fixture

PTFB191501E PTFB191501F

Drain Efficiency %

Drain Efficiency %

Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW MHz

Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = A, = 1990 MHz, 3GPP WCDMA,

PAR = 8 dB, 10 MHz carrier spacing, BW MHz
-25 1990 MHz Low
1990 MHz Up
1960 MHz Low
ts -35
1960 MHz Up
1930 MHz Low
1930 MHz Up

Gain dB
c -45
u -50
d -55
ro -60 31 33 35 37 39 41 43 45 47 49 p Output Power dBm

Gain

Efficiency
31 33 35 37 39 41 43 45 47 49 Output Power dBm
ued CW Power Sweep tin Gain & Efficiency vs. Output Power

VDD = 30 V, IDQ = A, = 1990 MHz
co 19

Gain
is 18

Two-tone Broadband Performance VDD = 30 V, IDQ = A, POUT = 63 W

Efficiency

IMD3

Drain Efficiency % Gain / Efficiency dB / %

Efficiency
25 15

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Datasheet ID: PTFB191501EV1R250XTMA1 638519