PTFA261301F V1

PTFA261301F V1 Datasheet

PTFA261301E PTFA261301F

Part	Datasheet
PTFA261301F V1	PTFA261301F V1 (pdf)

Related Parts	Information
PTFA261301E V1	PTFA261301E V1

PDF Datasheet Preview
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, GHz The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G 3GPP TSG RAN , and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 Adj. Channel Power Ratio dBc Drain Efficiency % 3-Carrier CDMA2000 Performance at 28 Volts IDQ = A, = 2680 MHz Efficiency Alt2 ACPR 5 -70 0 0 5 10 15 20 25 30 35 Output Power, avg. W PTFA261301F Package H-31260-2 • Thermally-enhanced, Pb-free packages, RoHS-compliant • Broadband internal matching • Typical CDMA performance at GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24% • Typical CW performance, 2680 MHz, 28 V - Output power at = 152 W - Efficiency = 47% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 130 W CW output power RF Performance CDMA IS-95 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 26 W average, = 2680 MHz Characteristic Symbol Min Typ Unit Adjacent Channel Power Ratio ACPR Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 12 PTFA261301E PTFA261301F RF Performance cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 130 W PEP, = 2680 MHz, tone spacing = 1 MHz Characteristic Symbol Min Gain Drain Efficiency Intermodulation Distortion Typ 36 Unit dB % dBc DC Characteristics Ordering Information Symbol VDSS VGS TJ PD TSTG Value 65 to +12 200 449 to +150 Unit V °C W W/°C °C °C/W Type PTFA261301E PTFA261301F Package Outline H-30260-2 H-31260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA261301E PTFA261301F See Infineon distributor for future availability. Data Sheet 2 of 12 Typical Performance data taken in a production test fixture PTFA261301E PTFA261301F Drain Efficiency % IM3, 5, 7 dBc Performance at 28 V IDQ = A, = 2680 MHz, tone spacing = 1 MHz Efficiency -70 0 Output Power, avg. W 5 100 Drain Efficiency % IM3, 5, 7 dBc Two-tone Performance at 32 V IDQ = A, = 2680 MHz, tone spacing = 1 MHz Efficiency IM5 20 IM7 15 -70 0 Output Power, avg. W 5 100 Drain Efficiency % Adj. Channel Power Ratio dBc CDMA IS-95 at 28 Volts IDQ = A, = 2680 MHz, tone spacing = 1 MHz Efficiency

PDF Datasheet Preview

PTFA261301E PTFA261301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, GHz

The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G 3GPP TSG RAN , and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFA261301E Package H-30260-2

Adj. Channel Power Ratio dBc Drain Efficiency %
3-Carrier CDMA2000 Performance at 28 Volts

IDQ = A, = 2680 MHz

Efficiency

Alt2

ACPR 5
-70 0
0 5 10 15 20 25 30 35

Output Power, avg. W

PTFA261301F Package H-31260-2
• Thermally-enhanced, Pb-free packages, RoHS-compliant
• Broadband internal matching
• Typical CDMA performance at GHz
- Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%
• Typical CW performance, 2680 MHz, 28 V - Output power at = 152 W - Efficiency = 47%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 28 V, 130 W CW output power

RF Performance

CDMA IS-95 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 26 W average, = 2680 MHz

Characteristic

Symbol Min Typ

Unit

Adjacent Channel Power Ratio

ACPR

Gain Drain Efficiency

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 12

PTFA261301E PTFA261301F

RF Performance cont.

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 130 W PEP, = 2680 MHz, tone spacing = 1 MHz

Characteristic

Symbol Min

Gain

Drain Efficiency

Intermodulation Distortion

Typ 36

Unit dB % dBc

DC Characteristics
Ordering Information

Symbol VDSS VGS TJ PD

TSTG

Value 65
to +12 200 449
to +150

Unit V °C W

W/°C °C
°C/W

Type PTFA261301E PTFA261301F

Package Outline H-30260-2 H-31260-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA261301E PTFA261301F
*See Infineon distributor for future availability. Data Sheet
2 of 12

Typical Performance data taken in a production test fixture

PTFA261301E PTFA261301F

Drain Efficiency %

IM3, 5, 7 dBc

Performance
at 28 V

IDQ = A, = 2680 MHz, tone spacing = 1 MHz

Efficiency
-70 0

Output Power, avg. W
5 100

Drain Efficiency % IM3, 5, 7 dBc

Two-tone Performance
at 32 V

IDQ = A, = 2680 MHz, tone spacing = 1 MHz

Efficiency

IM5 20

IM7 15
-70 0

Output Power, avg. W
5 100

Drain Efficiency %

Adj. Channel Power Ratio dBc

CDMA IS-95 at 28 Volts

IDQ = A, = 2680 MHz, tone spacing = 1 MHz

Efficiency

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Datasheet ID: PTFA261301FV1 638516