PTFA241301F V1

PTFA241301F V1 Datasheet

PTFA241301E PTFA241301F

Part	Datasheet
PTFA241301F V1	PTFA241301F V1 (pdf)

Related Parts	Information
PTFA241301E V1	PTFA241301E V1

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PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 2480 MHz The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G 3GPP TSG RAN , and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA241301E Package H-30260-2 PTFA241301F Package H-31260-2 Drain Efficiency % Adj. Ch. Power Ratio dBc Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 mA, = 2450 MHz ACP Up ACP Low Efficiency ALT Up 36 38 40 42 44 46 48 Output Power, Avg. dBm • Thermally-enhanced packaging, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25% • Typical CW performance, 2420 MHz, 28 V - Output power at = 140 W - Efficiency = 50% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 130 W CW output power RF Characteristics Three-carrier CDMA2000 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 1150 mA, POUT = 25 W average, = 2450 MHz Characteristic Symbol Min Typ Unit Gain Drain Efficiency Adjacent Channel Power Ratio ACPR All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 12 PTFA241301E PTFA241301F RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 1150 mA, POUT = 130 W PEP, = 2420 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc DC Characteristics Ordering Information Type PTFA241301E PTFA241301F Package Outline H-30260-2 H-31260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA241301E PTFA241301F See Infineon distributor for future availability. Data Sheet 2 of 12 PTFA241301E PTFA241301F Gain dB Return Loss dB Gain dB Efficiency % , POUT dBm Typical Performance data taken in a production test fixture Linear Broadband Performance VDD = 28 V, IDQ = 1150 mA, POUT, Avg. = dBm 15 Gain Return Loss 0 2420 2430 2440 2450 2460 Frequency MHz 2470 -20 2480 Broadband CW Performance at VDD = 28 V, IDQ = 1150 mA Output Power 52 Efficiency 50 13 Gain 12 2420 2430 2440 2450 2460 Frequency MHz 2470 47 2480 IMD dBc Gain dB Drain Efficiency % Intermodulation Distortion vs. Output Power as measured in a broadband circuit VDD = 28 V, IDQ = 1150 m A, = 2449 MHz, = 2450 MHz 0 3rd Order -80 36 38 40 42 44 46 48 50 52 Output Power, Avg. dBm Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1150 mA, = 2450 MHz 14 Gain 12 Efficiency 36 38 40 42 44 46 48 50 52 Output Power dBm Data Sheet

PDF Datasheet Preview

PTFA241301E PTFA241301F

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 2480 MHz

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G 3GPP TSG RAN , and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFA241301E Package H-30260-2

PTFA241301F Package H-31260-2

Drain Efficiency % Adj. Ch. Power Ratio dBc

Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 mA, = 2450 MHz

ACP Up

ACP Low

Efficiency

ALT Up
36 38 40 42 44 46 48

Output Power, Avg. dBm
• Thermally-enhanced packaging, Pb-free and RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%
• Typical CW performance, 2420 MHz, 28 V - Output power at = 140 W - Efficiency = 50%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 28 V, 130 W CW output power

RF Characteristics

Three-carrier CDMA2000 Measurements not subject to production by design/characterization in Infineon test fixture

VDD = 28 V, IDQ = 1150 mA, POUT = 25 W average, = 2450 MHz

Characteristic

Symbol Min Typ

Unit

Gain Drain Efficiency

Adjacent Channel Power Ratio

ACPR

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 12

PTFA241301E PTFA241301F

RF Characteristics cont.

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 1150 mA, POUT = 130 W PEP, = 2420 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ

Unit dB % dBc

DC Characteristics
Ordering Information

Type PTFA241301E PTFA241301F

Package Outline H-30260-2 H-31260-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA241301E PTFA241301F
*See Infineon distributor for future availability. Data Sheet
2 of 12

PTFA241301E PTFA241301F

Gain dB Return Loss dB

Gain dB Efficiency % , POUT dBm

Typical Performance data taken in a production test fixture

Linear Broadband Performance VDD = 28 V, IDQ = 1150 mA, POUT, Avg. = dBm
15 Gain

Return Loss
0 2420
2430
2440 2450 2460 Frequency MHz
2470
-20 2480

Broadband CW Performance at VDD = 28 V, IDQ = 1150 mA

Output Power 52

Efficiency 50
13 Gain
12 2420
2430
2440 2450 2460 Frequency MHz
2470
47 2480

IMD dBc Gain dB Drain Efficiency %

Intermodulation Distortion vs. Output Power as measured in a broadband circuit

VDD = 28 V, IDQ = 1150 m A,
= 2449 MHz, = 2450 MHz 0
3rd Order
-80 36 38 40 42 44 46 48 50 52

Output Power, Avg. dBm

Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1150 mA, = 2450 MHz
14 Gain
12 Efficiency
36 38 40 42 44 46 48 50 52

Output Power dBm

Data Sheet

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Datasheet ID: PTFA241301FV1 638513