PTFA212401F V4 R250

PTFA212401F V4 R250 Datasheet

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Part	Datasheet
PTFA212401F V4 R250	PTFA212401F V4 R250 (pdf)

Related Parts	Information
PTFA212401F V4	PTFA212401F V4
PTFA212401E V4	PTFA212401E V4
PTFA212401E V4 R250	PTFA212401E V4 R250

PDF Datasheet Preview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 2170 MHz The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio dB Drain Efficiency % Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = dB, MHz BW ACPR Up ACPR Low -60 36 Efficiency Average Output Power dBm • Thermally-enhanced packages, Pb-free and RoHS compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = dBm - Linear Gain = dB - Efficiency = 28% - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = dB - Average output power = 49 dBm - Linear Gain = dB - Efficiency = 34% - Adjacent channel power = dBc • Typical CW performance, 2140 MHz, 30 V - Output power at = 240 W - Efficiency = 54% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 5:1 VSWR 30 V, 240 W CW output power All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution RF Characteristics Two-Carrier WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 50 W average = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Unit dB % dBc Two-tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 220 W PEP, = 2140 MHz, = 2141 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Ordering Information PTFA212401E PTFA212401F Type and Version PTFA212401E V4 PTFA212401F V4 Package Outline H-36260-2 H-37260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Typical Performance data taken in a production test fixture 3rd Order IMD dBc Gain dB , Efficiency % Input Return Loss dB Two-carrier WCDMA at Selected Biases VDD = 30 V, = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ -30 A -40 Output Power, PEP dBm Broadband Performance VDD = 30 V, IDQ = 1600 m A, POUT = 50 W 40 35 30 25 20 15 10 2050 Return Loss Efficiency Gain 2080 2110 2140 2170 Frequency MHz -5 -10 -15 -20 -25 -30 -35 2200 See Infineon distributor for future availability. Data Sheet 3 of 11 Confidential, Limited Internal Distribution Typical Performance cont. Gain dB Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, = 2140 MHz Gain TCASE = 25°C Efficiency TCASE = 90°C 80 120 160 200 Output Power W 15 240 Drain Efficiency % Intermodulation Distortion dBc PTFA212401E PTFA212401F Intermodulation Distortion Products vs. Tone Spacing VDD = 30 V IDQ = 1600 mA , = 2140 MHz, POUT = 53 dBm PEP -25 3rd Order -55 0 5 10 15 20 25 30 35 40

PDF Datasheet Preview

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 2170 MHz

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA212401E Package H-36260-2

PTFA212401F Package H-37260-2

PTFA212401E PTFA212401F

Adjacent Channel Power Ratio dB Drain Efficiency %

Single-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 1600 mA, = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = dB, MHz BW

ACPR Up

ACPR Low
-60 36

Efficiency

Average Output Power dBm
• Thermally-enhanced packages, Pb-free and RoHS compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = dBm - Linear Gain = dB - Efficiency = 28% - Intermodulation distortion = dBc - Adjacent channel power = dBc
• Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = dB - Average output power = 49 dBm - Linear Gain = dB - Efficiency = 34% - Adjacent channel power = dBc
• Typical CW performance, 2140 MHz, 30 V - Output power at = 240 W - Efficiency = 54%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR 30 V, 240 W CW output power

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 11

PTFA212401E PTFA212401F

Confidential, Limited Internal Distribution

RF Characteristics

Two-Carrier WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 50 W average = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF

Characteristic

Symbol Min Typ

Gain

Drain Efficiency

Intermodulation Distortion

Unit dB % dBc

Two-tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 220 W PEP, = 2140 MHz, = 2141 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ
Ordering Information

PTFA212401E PTFA212401F

Type and Version PTFA212401E V4 PTFA212401F V4

Package Outline H-36260-2 H-37260-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Shipping Tray

Typical Performance data taken in a production test fixture
3rd Order IMD dBc Gain dB , Efficiency % Input Return Loss dB

Two-carrier WCDMA at Selected Biases VDD = 30 V, = 2140 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,
series show IDQ -30

A -40

Output Power, PEP dBm

Broadband Performance VDD = 30 V, IDQ = 1600 m A, POUT = 50 W
40 35 30 25 20 15 10
2050

Return Loss

Efficiency

Gain
2080
2110 2140 2170 Frequency MHz
-5 -10 -15 -20 -25 -30 -35 2200
*See Infineon distributor for future availability. Data Sheet
3 of 11

Confidential, Limited Internal Distribution

Typical Performance cont.

Gain dB

Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, = 2140 MHz

Gain

TCASE = 25°C Efficiency TCASE = 90°C
80 120 160 200

Output Power W
15 240

Drain Efficiency % Intermodulation Distortion dBc

PTFA212401E PTFA212401F

Intermodulation Distortion Products
vs. Tone Spacing

VDD = 30 V IDQ = 1600 mA , = 2140 MHz,

POUT = 53 dBm PEP
-25 3rd Order
-55 0 5 10 15 20 25 30 35 40

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Datasheet ID: PTFA212401FV4R250 638511