The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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PTFA192401EV4R250FTMA1 (pdf) |
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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 1990 MHz The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192401E Package H-36260-2 PTFA192401F Package H-37260-2 PTFA192401E PTFA192401F Adjacent Channel Power Ratio dB Drain Efficiency % Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = dB, MHz BW Efficiency 30 -40 ACPR Low ACPR Up 34 36 38 40 42 44 46 48 50 Average Output Power dBm • Pb-free, RoHS-compliant and thermally-enhanced packages • Broadband internal matching • Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = dBm - Linear Gain = 16 dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, PAR = dB - Average output power = 49 dBm - Linear Gain = 16 dB - Efficiency = 33% - Adjacent channel power = dBc • Typical CW performance, 1960 MHz, 30 V - Output power at = 240 W - Efficiency = 54% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 5:1 VSWR 30 V, 240 W CW output power All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA192401E PTFA192401F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 50 W average = 1955 MHz, = 1965 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Unit dB % dBc Two-tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 220 W PEP, = 1960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Ordering Information Type and Version PTFA192401E V4 PTFA192401F V4 Package Type H-36260-2 H-37260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA192401E PTFA192401F Typical Performance data taken in a production test fixture Intermodulation Distortion dBc Gain dB , Efficiency % Input Return Loss dB Intermodulation Distortion Products v. Output Power VDD = 30 V, IDQ = 1600 m A, = MHz, = MHz -20 Up Low IM3 IM5 -60 10 100 Output Power, PEP W 1000 Broadband Performance VDD = 30 V, IDQ = 1600 m A, POUT = 50 W Input Return Loss Efficiency 15 Gain 10 1860 1890 1920 1950 1980 Frequency MHz 2010 -35 2040 *See Infineon distributor for future availability. Data Sheet 3 of 11 Confidential, Limited Internal Distribution Typical Performance cont. Gain dB Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, = 1990 MHz 16 Gain TCASE = 25°C Efficiency TCASE = 90°C 40 80 120 160 200 240 Output Power W Drain Efficiency % Intermodulation Distortion dBc PTFA192401E PTFA192401F Intermodulation Distortion Products vs. Tone Spacing VDD = 30 V IDQ = 1800 mA , = 1960 MHz, POUT = 53 dBm PEP 3rd Order 0 5 10 15 20 25 30 35 40 Tone Spacing MHz IM3 dBc , ACPR dBc |
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