PTFA142401FLV4XWSA1
PTFA142401FLV4XWSA1 Datasheet
The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
| Part | Datasheet |
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PTFA142401FLV4XWSA1 |
PTFA142401FLV4XWSA1 (pdf) |
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PTFA142401ELV4XWSA1 |
PTFA142401ELV4XWSA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 1500 MHz The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 PTFA142401EL PTFA142401FL Adjacent Channel Power Ratio dB Drain Efficiency % DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, = 1475 MHz, DVB-T signal, PAR = dB at 8 MHz BW ACPR = MHz delta marker, 30 kHz RBW Efficiency -35 ACPR Hi ACPR Low 42 43 44 45 46 47 48 49 Average Output Power dBm • Pb-free, RoHS-compliant and thermally-enhanced packages with less than micron Au plating • Broadband internal matching • Typical DVB-T performance at 1475 MHz, 30 V - Average output power = dBm - Linear Gain = dB - Efficiency = - Adjacent channel power = dBc • Typical CW performance, 1475 MHz, 30 V - Output power at = 240 W - Efficiency = 52% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 200 W CW output power RF Characteristics DVB-T Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 50 W average = 1475 MHz DVB-T, channel bandwidth = MHz , peak/average = dB CCDF Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio MHz offset, 30 kHz RBW Symbol Min Typ ACPR Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 240 W PEP, = 1500 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min PTFA142401EL PTFA142401FL Unit DC Characteristics Ordering Information Symbol V BR DSS IDSS RDS on VGS IGSS Min 65 Unit V µA µA V µA Symbol VDSS VGS TJ PD TSTG Value 65 to +12 200 625 to +150 Unit V °C W W/°C °C °C/W Type and Version PTFA142401EL V4 PTFA142401FL V4 Package Outline H-33288-2 H-34288-2 Package Description Thermally-enhanced, slotted flange, single-ended Thermally-enhanced, earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10 Shipping Tray Tray Marking PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance data taken in an Infineon test fixture PTFA142401EL PTFA142401FL Drain Efficiency % Intermodulation Distortion dBc Two-tone Drive-up VDD = 30 V, IDQ = 2000 m A, = 1475 MHz, tone spacing = 1 MHz -25 -30 -35 -40 -45 -50 -55 -60 -65 Efficiency IM5 30 25 IM7 20 Output Power, PEP dBm Drain Efficiency % Gain dB Power Sweep, CW Conditions VDD = 30 V, IDQ = 2000 mA, = 1475 MHz 16 Gain 40 Efficiency |
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