PTFA070601FV4XWSA1
PTFA070601FV4XWSA1 Datasheet
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
| Part | Datasheet |
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PTFA070601FV4XWSA1 |
PTFA070601FV4XWSA1 (pdf) |
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| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 770 MHz The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 PTFA070601E PTFA070601F IM3 dBc , ACPR dBc Drain Efficiency % 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency ACPR 29 31 33 35 37 39 41 43 45 47 Output Power, avg. dBm • Broadband internal matching • Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 dB - Efficiency = 29% • Typical CW performance, 760 MHz, 28 V - Output power at = 60 W - Gain = 19 dB - Efficiency = 72% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 60 W CW output power • Pb-free and RoHS-compliant RF Characteristics WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, = 760 MHz Characteristic Symbol Min Typ Unit Intermodulation Distortion Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 600 mA, POUT = 60 W PEP, = 760 MHz, tone spacing = 1 MHz Characteristic Symbol Min Gain Drain Efficiency Intermodulation Distortion Ordering Information Symbol VDSS VGS TJ PD TSTG Value 65 to +12 200 219 to +150 Unit V °C W W/°C °C °C/W Type and Version PTFA070601E V4 PTFA070601F V4 Package Outline H-36265-2 H-37265-2 Package Description Thermally-enhanced, slotted flange, single-ended Thermally-enhanced, earless flange, single-ended Shipping Tray Tray Marking PTFA070601E PTFA070601F *See Infineon distributor for future availability. Data Sheet 2 of 10 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA070601E PTFA070601F Input Return Loss dB Gain dB Power Sweep, CW Conditions VDD = 28 V, IDQ = 600 mA, = 760 MHz TCASE = -10°C TCASE = 25°C Gain TCASE = 80°C 20 55 19 45 35 17 Efficiency 36 38 40 42 44 46 48 50 Output Power dBm Drain Efficiency % Gain dB , Efficiency % Broadband Performance VDD = 28 V, IDQ = 600 mA, POUT = 45 dBm 50 45 40 35 30 25 20 15 |
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