PTF240101S V1

PTF240101S V1 Datasheet

PTF240101S

Part	Datasheet
PTF240101S V1	PTF240101S V1 (pdf)

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PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 2700 MHz The PTF240101S is a 10-watt, internally-matched FET device intended for CDMA2000 and WiMAX applications in the to GHz band. Full gold metallization ensures excellent device lifetime and reliability. Drain Efficiency % Adj. Ch. Power Ratio dBc Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 180 mA, = 2680 MHz Efficiency 25 ACP Up ALT Up ACP Low 0 28 30 32 34 36 38 40 Output Power dBm , PEP -30 -35 -40 -45 -50 -55 -60 -65 -70 42 PTF240101S Package H-32259-2 • Pb-free and RoHS-compliant • Typical CDMA2000 performance - Average output power = W - Gain = 16 dB - Efficiency = 18% - ACPR = dBc • Typical CW performance - Output power at = 15 W - Efficiency = 45% • Integrated ESD protection Human Body Model Class 1 minimum • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR 28 V, 10 W CW output power RF Characteristics, CDMA2000 Operation CDMA2000 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 2 W, = 2680 MHz Characteristic Adjacent Channel Power Ratio Gain Symbol Min Typ Unit ACPR Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 2680 MHz, tone spacing = 1 MHz Characteristic Gain Intermodulation Distortion Symbol Min Typ Unit dB dBc All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 12 PTF240101S RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture cont. VDD = 28 V, IDQ = 160 mA, = 2680 MHz, tone spacing = 7 MHz Characteristic Gain Efficiency at 1 W avg. Intermodulation Distortion at 1 W avg. Compression at 10 W avg. Input Return Loss at GHz Symbol Min Typ Pcomp IRL Unit dB % dBc dB DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V Symbol V BR DSS IDSS RDS on Ordering Information Type PTF240101S Package Outline H-32259-2 Package Description Thermally-enhanced, surface mount Marking PTF240101S Data Sheet 2 of 12 PTF240101S Return Loss dB Typical Performance, CDMA2000 Operation measurements taken in broadband test fixture Gain dB Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 180 mA, = 2680 MHz 18 17 Gain 16 15 14 13 12 11 30 Efficiency Output Power dBm Drain Efficiency % Gain dB , Efficiency % Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 10 W Efficiency Return Loss -10 15 Gain 10 2600 2620 2640 2660 2680 Frequency MHz -25 2700 Adj. Ch. Power Ratio dBc Power Gain dB Gain vs. Output Power VDD = 28 V, = 2680 MHz IDQ = 220 mA IDQ = 180 mA IDQ = 100 mA 26 29 32 35 38 41 44 Output Power dBm Drain Efficiency % IS-95 CDMA Performance VDD = 28 V, IDQ = 180 mA, = 2680 MHz 70 60 50 40 30 20 10 Efficiency -60 -65 31 33 35 37 39 Output Power dBm , Avg.

PDF Datasheet Preview

PTF240101S

Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 2700 MHz

The PTF240101S is a 10-watt, internally-matched FET device intended for CDMA2000 and WiMAX applications in the to GHz band. Full gold metallization ensures excellent device lifetime and reliability.

Drain Efficiency % Adj. Ch. Power Ratio dBc

Three-Carrier CDMA2000 Performance

VDD = 28 V, IDQ = 180 mA, = 2680 MHz

Efficiency
25 ACP Up

ALT Up

ACP Low
0 28 30 32 34 36 38 40

Output Power dBm , PEP
-30 -35 -40 -45 -50 -55 -60 -65 -70 42

PTF240101S Package H-32259-2
• Pb-free and RoHS-compliant
• Typical CDMA2000 performance
- Average output power = W - Gain = 16 dB - Efficiency = 18% - ACPR = dBc
• Typical CW performance - Output power at = 15 W - Efficiency = 45%
• Integrated ESD protection Human Body Model Class 1 minimum
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR 28 V, 10 W CW output power

RF Characteristics, CDMA2000 Operation

CDMA2000 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 2 W, = 2680 MHz

Characteristic Adjacent Channel Power Ratio Gain

Symbol Min Typ

Unit

ACPR

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 2680 MHz, tone spacing = 1 MHz

Characteristic Gain Intermodulation Distortion

Symbol Min Typ

Unit dB dBc

All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 12

PTF240101S

RF Characteristics cont.

Two-tone Measurements tested in Infineon test fixture cont. VDD = 28 V, IDQ = 160 mA, = 2680 MHz, tone spacing = 7 MHz

Characteristic Gain Efficiency at 1 W avg. Intermodulation Distortion at 1 W avg. Compression at 10 W avg. Input Return Loss at GHz

Symbol Min Typ

Pcomp IRL

Unit dB % dBc dB

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, IDS = 10 µA VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = A VDS = 28 V, IDQ = 180 mA VGS = 10 V, VDS = 0 V

Symbol V BR DSS

IDSS RDS on
Ordering Information

Type PTF240101S

Package Outline H-32259-2

Package Description Thermally-enhanced, surface mount

Marking PTF240101S

Data Sheet
2 of 12

PTF240101S

Return Loss dB

Typical Performance, CDMA2000 Operation measurements taken in broadband test fixture

Gain dB

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 180 mA, = 2680 MHz
18 17 Gain 16 15 14 13 12 11
30 Efficiency

Output Power dBm

Drain Efficiency % Gain dB , Efficiency %

Broadband Performance

VDD = 28 V, IDQ = 180 mA, POUT = 10 W

Efficiency

Return Loss -10
15 Gain
10 2600
2620
2640
2660
2680

Frequency MHz
-25 2700

Adj. Ch. Power Ratio dBc

Power Gain dB

Gain vs. Output Power

VDD = 28 V, = 2680 MHz

IDQ = 220 mA IDQ = 180 mA IDQ = 100 mA
26 29 32 35 38 41 44 Output Power dBm

Drain Efficiency %

IS-95 CDMA Performance

VDD = 28 V, IDQ = 180 mA, = 2680 MHz
70 60 50 40 30 20 10

Efficiency -60 -65
31 33 35 37 39 Output Power dBm , Avg.

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Datasheet ID: PTF240101SV1 638491