PTF210451E V1

PTF210451E V1 Datasheet

PTF210451E PTF210451F

Part	Datasheet
PTF210451E V1	PTF210451E V1 (pdf)

Related Parts	Information
PTF210451F V1	PTF210451F V1

PDF Datasheet Preview
PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 2025 MHz and 2110 2170 MHz The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTF210451E Package H-30265-2 PTF210451F Package H-31265-2 Efficiency % ACPR dBc 3-Carrier TD-SCDMA Drive-up VDD = 28 V, IDQ = 580 mA, = MHz Ef f iciency Alt Low er Adj Low er Alt Upper Adj Upper Output Power W • Thermally-enhanced packages, Pb-free and RoHS-compliant • Internal matching for wideband performance • Typical three-carrier TD-SCDMA performance - Average output power = 3 W - Gain = 14 dB - Efficiency = - ACPR = dBc • Typical CW performance - Output power at = 50 W - Linear gain = 14 dB - Efficiency = 53% • Integrated ESD protection Human Body Model, Class 1 minimum • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR 28 V, 45 W CW output power RF Characteristics WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 500 mA, POUT = W AVG = 2140 MHz, = 2150 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol Min Typ Unit dBc dB % All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTF210451E PTF210451F RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Unit dB % dBc Ordering Information Type and Version PTF210451E V1 PTF210451F V1 Package Outline H-30265-2 H-31265-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTF210451E PTF210451F See Infineon distributor for future availability. Data Sheet 2 of 10 Typical Performance data taken in production test fixture PTF210451E PTF210451F Gain dB , Efficiency % Input Return Loss dB Gain dB Drain Efficiency % Broadband Performance VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm Efficiency 15 Gain 0 2070 Input Retrun Loss 2105 2140 2175 Frequency MHz 0 -5 -10 -15 -20 -25 -30 2210 Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, = 2170 MHz Efficiency Gain 34 36 38 40 42 44 46 48 Output Power dBm IMD dBc IMD dBc Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, = 2140 MHz, tone spacing = 1 MHz -40 A -55 A 34 36 38 40 42 44 46 48 Output Power, PEP dBm Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 500 mA, = 2140 MHz, POUT = 45 W PEP -30 3rd Order -35 -40 5th Order -45 -50 7th Order -55 -60 0 Tone Spacing MHz Data Sheet

PDF Datasheet Preview

PTF210451E PTF210451F

Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 2025 MHz and 2110 2170 MHz

The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

PTF210451E Package H-30265-2

PTF210451F Package H-31265-2

Efficiency % ACPR dBc
3-Carrier TD-SCDMA Drive-up VDD = 28 V, IDQ = 580 mA, = MHz

Ef f iciency

Alt Low er

Adj Low er

Alt Upper

Adj Upper

Output Power W
• Thermally-enhanced packages, Pb-free and RoHS-compliant
• Internal matching for wideband performance
• Typical three-carrier TD-SCDMA performance - Average output power = 3 W - Gain = 14 dB - Efficiency = - ACPR = dBc
• Typical CW performance - Output power at = 50 W - Linear gain = 14 dB - Efficiency = 53%
• Integrated ESD protection Human Body Model, Class 1 minimum
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR 28 V, 45 W CW output power

RF Characteristics

WCDMA Measurements not subject to production by design/characterization in Infineon test fixture

VDD = 28 V, IDQ = 500 mA, POUT = W AVG = 2140 MHz, = 2150 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF

Characteristic Intermodulation Distortion Gain Drain Efficiency

Symbol Min Typ

Unit dBc dB %

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 10

PTF210451E PTF210451F

RF Characteristics cont.

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, = 2170 MHz, tone spacing = 1 MHz

Characteristic

Symbol Min Typ

Gain

Drain Efficiency

Intermodulation Distortion

Unit dB % dBc
Ordering Information

Type and Version PTF210451E V1 PTF210451F V1

Package Outline H-30265-2 H-31265-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTF210451E PTF210451F
*See Infineon distributor for future availability. Data Sheet
2 of 10

Typical Performance data taken in production test fixture

PTF210451E PTF210451F

Gain dB , Efficiency % Input Return Loss dB

Gain dB Drain Efficiency %

Broadband Performance VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm

Efficiency
15 Gain
0 2070

Input Retrun Loss
2105
2140
2175

Frequency MHz
0 -5 -10 -15 -20 -25 -30 2210

Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, = 2170 MHz

Efficiency

Gain
34 36 38 40 42 44 46 48

Output Power dBm

IMD dBc IMD dBc

Intermodulation Distortion vs. Output Power for selected currents

VDD = 28 V, = 2140 MHz, tone spacing = 1 MHz
-40 A
-55 A
34 36 38 40 42 44 46 48

Output Power, PEP dBm

Intermodulation Distortion Products vs. Tone Spacing

VDD = 28 V, IDQ = 500 mA, = 2140 MHz, POUT = 45 W PEP
-30 3rd Order -35
-40 5th Order -45
-50 7th Order -55
-60 0

Tone Spacing MHz

Data Sheet

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Datasheet ID: PTF210451EV1 638490