SPD30N08S2-22
SPD30N08S2-22 Datasheet
SPD30N08S2-22
| Part | Datasheet |
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SPD30N08S2-22 |
SPD30N08S2-22 (pdf) |
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| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPD30N08S2-22 Product Summary RDS on P- TO252 -3-11 Type Package Ordering Code Marking SPD30N08S2-22 P- TO252 -3-11 Q67060-S7413 2N0822 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=60, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 30 120 ±20 136 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPD30N08S2-22 Values Unit min. typ. max. RthJC RthJA - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
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