SPD30N06S2-15
SPD30N06S2-15 Datasheet
SPD30N06S2-15
| Part | Datasheet |
|---|---|
SPD30N06S2-15 |
SPD30N06S2-15 (pdf) |
| PDF Datasheet Preview |
|---|
| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPD30N06S2-15 Product Summary RDS on P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253 2N0615 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 30 120 ±20 136 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPD30N06S2-15 Values Unit min. typ. max. RthJC RthJA - K/W - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
| More datasheets: MB181170 | MB158080 | MB181110 | MB158055VL | MB158055 | MB181160 | MB105040VL | MB126540 | MB126565 | MB126540VL |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPD30N06S2-15 Datasheet file may be downloaded here without warranties.