SPD30N03S2L20GBTMA1

SPD30N03S2L20GBTMA1 Datasheet


SPD30N03S2L-20 G

Part Datasheet
SPD30N03S2L20GBTMA1 SPD30N03S2L20GBTMA1 SPD30N03S2L20GBTMA1 (pdf)
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Power-Transistor

Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS on product FOM
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated ° Pb-free lead plating RoHS compliant

SPD30N03S2L-20 G

Product Summary

RDS on

PG- TO252 -3

Type

Package

Marking

SPD30N03S2L-20G PG- TO252 -3 2N03L20

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=30 A , VDD=25V,

IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

Value
30 120
±20 60
+175 55/175/56

Unit A
kV/µs V W °C
02-09-2008

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPD30N03S2L-20 G

Values

Unit
min. typ. max.
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Datasheet ID: SPD30N03S2L20GBTMA1 638434