IRGS4064DPBF

IRGS4064DPBF Datasheet

IRGS4064DPbF

Part	Datasheet
IRGS4064DPBF	IRGS4064DPBF (pdf)

Related Parts	Information
IRGS4064DTRRPBF	IRGS4064DTRRPBF
IRGS4064DTRLPBF	IRGS4064DTRLPBF

PDF Datasheet Preview
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5us SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE on Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 96424 IRGS4064DPbF n-channel VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE on typ. = 1.6V Gate D2Pak Collector Emitter Absolute Maximum Ratings Parameter VCES TC = 25°C TC = 100°C ICM ILM Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current c Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current d Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC =25° PD TC =100° Maximum Power Dissipation Maximum Power Dissipation Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter e Junction-to-Case - IGBT e Junction-to-Case - Diode Case-to-Sink, flat, greased surface e Junction-to-Ambient, typical socket mount Weight Max. 600 20 10 40 20 10 40 ±20 ±30 101 50 -55 to + 175 Units V V W °C 300 in. 1.6mm from case Min.

PDF Datasheet Preview

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features
• Low VCE on Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5us SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE on Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package

Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI

PD - 96424

IRGS4064DPbF
n-channel

VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C

VCE on typ. = 1.6V

Gate

D2Pak

Collector

Emitter

Absolute Maximum Ratings

Parameter

VCES TC = 25°C TC = 100°C ICM ILM

Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current
c Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Continuous Forward Current
d Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage

PD TC =25° PD TC =100°

Maximum Power Dissipation Maximum Power Dissipation

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter
e Junction-to-Case - IGBT e Junction-to-Case - Diode

Case-to-Sink, flat, greased surface
e Junction-to-Ambient, typical socket mount

Weight

Max. 600 20 10 40 20 10 40 ±20 ±30 101 50
-55 to + 175

Units V

V W °C
300 in. 1.6mm from case

Min.

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Datasheet ID: IRGS4064DPBF 638365