IRGP4263DPBF

IRGP4263DPBF Datasheet

IRGP4263DPbF IRGP4263D-EPbF

Part	Datasheet
IRGP4263DPBF	IRGP4263DPBF (pdf)

Related Parts	Information
IRGP4263D-EPBF	IRGP4263D-EPBF

PDF Datasheet Preview
VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC TJ max = 175°C VCE ON typ. = 1.7V IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding n-channel G Gate IRGP4263DPbF C Collector E Emitter Low VCE ON and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE ON temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Environmentally friendly Base part number IRGP4263DPbF IRGP4263D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4263DPbF IRGP4263D-EPbF Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C VGE PD TC = 25°C PD TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 90 60 192 74 45 ±20 325 160 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V Thermal Resistance Parameter IGBT Diode Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Min. Typ. 40 Max.

PDF Datasheet Preview

VCES = 650V IC = 60A, TC =100°C

IRGP4263DPbF IRGP4263D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
tSC TJ max = 175°C

VCE ON typ. = 1.7V IC = 48A

Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
n-channel

G Gate

IRGP4263DPbF

C Collector

E Emitter

Low VCE ON and switching losses

Square RBSOA and maximum junction temperature 175°C Positive VCE ON temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant

Benefits High efficiency in a wide range of applications and switching frequencies

Improved reliability due to rugged hard switching performance and higher power capability

Enables short circuit protection scheme

Environmentally friendly

Base part number

IRGP4263DPbF IRGP4263D-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP4263DPbF IRGP4263D-EPbF

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C VGE PD TC = 25°C PD TC = 100°C TJ TSTG

Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max. 650 90 60 192 74 45 ±20 325 160 -40 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Units V

Thermal Resistance

Parameter

IGBT Diode

Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount

Min.

Typ. 40

Max.

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Datasheet ID: IRGP4263DPBF 638349