IRGP4086PBF

IRGP4086PBF Datasheet

IRGP4086PbF

Part	Datasheet
IRGP4086PBF	IRGP4086PBF (pdf)

PDF Datasheet Preview
PDP TRENCH IGBT PD - 97132 IRGP4086PbF Key Parameters l Advanced Trench IGBT Technology VCE min l Optimized for Sustain and Energy Recovery VCE ON typ. IC = 70A Circuits in PDP Applications l Low VCE on and Energy per Pulse EPULSETM for Improved Panel Efficiency IRP max TC= 25°C TJ max 250 150 A °C l High Repetitive Peak Current Capability l Lead Free Package n-channel TO-247AC G a te C o lle c to r E Em itter This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE on and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC TC = 25°C IC TC = 100°C IRP TC = 25°C PD = 25°C PD = 100°C Gate-to-Emitter Voltage Continuous Collector Current, VGE 15V Continuous Collector, VGE 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Thermal Resistance IGBT Parameter Thermal Resistance Junction-to-Case- each IGBT d Case-to-Sink flat, greased surface Junction-to-Ambient typical socket mount d Weight Max. ±30 70 40 250 160 63 -40 to + 150 300 10lbxin 1.1Nxm Typ. Max. 40 Units V A W/°C N Units °C/W g oz 4/17/08

PDF Datasheet Preview

PDP TRENCH IGBT

PD - 97132

IRGP4086PbF

Key Parameters
l Advanced Trench IGBT Technology

VCE min
l Optimized for Sustain and Energy Recovery

VCE ON typ. IC = 70A

Circuits in PDP Applications l Low VCE on and Energy per Pulse EPULSETM
for Improved Panel Efficiency

IRP max TC= 25°C TJ max
250 150

A °C
l High Repetitive Peak Current Capability
l Lead Free Package
n-channel

TO-247AC

G a te

C o lle c to r

E Em itter

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE on and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.

Absolute Maximum Ratings

Parameter

VGE IC TC = 25°C IC TC = 100°C IRP TC = 25°C PD = 25°C PD = 100°C

Gate-to-Emitter Voltage Continuous Collector Current, VGE 15V Continuous Collector, VGE 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor

TJ TSTG

Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

IGBT

Parameter Thermal Resistance Junction-to-Case- each IGBT d Case-to-Sink flat, greased surface Junction-to-Ambient typical socket mount d Weight

Max. ±30 70 40 250 160 63 -40 to + 150
300 10lbxin 1.1Nxm

Typ.

Max. 40

Units V A

W/°C

N Units °C/W g oz
4/17/08

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRGP4086PBF Datasheet file may be downloaded here without warranties.

Datasheet ID: IRGP4086PBF 638346