IRG4BC20U-S

IRG4BC20U-S Datasheet

IRG4BC20U

Part	Datasheet
IRG4BC20U-S	IRG4BC20U-S (pdf)

Related Parts	Information
IRG4BC20U	IRG4BC20U
IRG4BC20UPBF	IRG4BC20UPBF

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PD - 91448D INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20U UltraFast Speed IGBT • UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package n-channel • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE on typ. = 1.85V = 15V, IC = 6.5A Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight TO-220AB Max. 600 13 52 ± 20 60 24 -55 to + 150 300 in. 1.6mm from case 10 lbf•in 1.1N•m Units V A V mJ W Typ. Max. 80 Units °C/W 4/17/2000 IRG4BC20U Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES Collector-to-Emitter Breakdown Voltage 600 V BR ECS Emitter-to-Collector Breakdown Voltage T 18 Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V VCE ON Collector-to-Emitter Saturation Voltage VGE th Gate Threshold Voltage Temperature Coeff. of Threshold Voltage

PDF Datasheet Preview

PD - 91448D

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC20U

UltraFast Speed IGBT
• UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
n-channel
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs

VCES = 600V VCE on typ. = 1.85V
= 15V, IC = 6.5A

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight

TO-220AB

Max. 600 13 52 ± 20 60 24 -55 to + 150
300 in. 1.6mm from case 10 lbf•in 1.1N•m

Units V A

V mJ W

Typ.

Max. 80

Units
°C/W
4/17/2000

IRG4BC20U

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR CES Collector-to-Emitter Breakdown Voltage 600 V BR ECS Emitter-to-Collector Breakdown Voltage T 18 Temperature Coeff. of Breakdown Voltage

V/°C

VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA

IC = 6.5A

VGE = 15V

VCE ON

Collector-to-Emitter Saturation Voltage

VGE th

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

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Datasheet ID: IRG4BC20U-S 638342