IRFH7882TRPBF

IRFH7882TRPBF Datasheet


FastIRFET IRFH7882PbF

Part Datasheet
IRFH7882TRPBF IRFH7882TRPBF IRFH7882TRPBF (pdf)
PDF Datasheet Preview
VDSS RDS on max VGS = 10V

Qg typical Rg typical

ID Bottom = 25°C
80 49

FastIRFET IRFH7882PbF

Power MOSFET

PQFN 5X6 mm
• Optimized for Secondary Side Synchronous Rectification
• Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
• Hot Swap and Active O-Ring
• BLDC Motor Drive

Features Low RDS ON < Low Thermal Resistance to PCB <0.64°C/W 100% Rg Tested Low Profile mm Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1

Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability

Base part number IRFH7882PbF

Package Type PQFN 5mm x 6 mm

Standard Pack

Form

Quantity

Tape and Reel
4000

Orderable Part Number IRFH7882TRPbF

Absolute Maximum Ratings

Parameter

VGS ID TA = 25°C ID TC Bottom = 25°C ID TC Bottom = 100°C IDM PD = 25°C PD = 25°C

Gate-to-Source Voltage Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor

TJ TSTG

Operating Junction and Storage Temperature Range

Max. ± 20 26 180 114 290 195 -55 to + 150

Units V

W/°C

Notes through are on page 8 1 2015 International Rectifier

Submit Datasheet Feedback

May 5, 2015

IRFH7882PbF

Static TJ = 25°C unless otherwise specified Parameter

BVDSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

IDSS
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Datasheet ID: IRFH7882TRPBF 638336