FastIRFET IRFH7190PbF
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IRFH7190TRPBF (pdf) |
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FastIRFET IRFH7190PbF VDSS RDS on max VGS = 10V Qg typical Rg typical ID Bottom = 25°C 100 26 Power MOSFET PQFN 5X6 mm • Optimized for Secondary Side Synchronous Rectification • Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies • Hot Swap and Active O-Ring • BLDC Motor Drive Features Low RDS ON < Internal Snubber Low Thermal Resistance to PCB <1.2°C/W 100% Rg Tested Low Profile mm Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Reduced Vds Spike, Improved EMI Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH7190PbF Package Type PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7190TRPbF Absolute Maximum Ratings Parameter VGS ID TA = 25°C ID TC Bottom = 25°C ID TC Bottom = 100°C IDM PD = 25°C PD = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Max. ± 20 15 82 52 245 104 -55 to + 150 Units V W/°C Notes through are on page 9 1 2015 International Rectifier Submit Datasheet Feedback January 13, 2015 IRFH7190PbF Static TJ = 25°C unless otherwise specified Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current |
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