IRAM136-3023B

IRAM136-3023B Datasheet

IRAM136-3023B

Part	Datasheet
IRAM136-3023B	IRAM136-3023B (pdf)

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IRAM136-3023B Series Integrated Power Hybrid IC for ow Voltage Motor Applications 30A, 150V with Internal Shunt Resistor International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low RDS on Advance Planar MOSFET Super Rugged technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new developed single in line package SiP3 with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. Integrated ate Drivers Temperature Monitor and Protection Overcurrent shutdown ow RDS on Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power up to 4.0kW / 48~100 Vdc Fully Isolated Package, Isolation 2000VRMS min RoHS Compliant Recognized by U File umber E252584 Absolute Maximum Ratings Parameter Value Units VBR DSS V+ MOSFET Blocking Voltage Positive Bus Input Voltage 150 V IO TC=25°C RMS Phase Current ote 1 IO TC=100°C RMS Phase Current ote 1 Pulsed RMS Phase Current ote 1 and 2 FPWM PWM Carrier Frequency Power Dissipation per MOSFET TC =25°C VISO Isolation Voltage 1min 2000 VRMS TJ MOSFET & IC Maximum Operating Junction Temperature +150 Operating Case Temperature Range -20 to +100 Storage Temperature Range -40 to +125 Mounting Torque M4 screw ote 1 Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3 ote 2 tP<100ms TC=25°C FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics" IRAM136-3023B Internal Electrical Schematic IRAM136-3023B V+ 10 V- 12 R10A,B,C,D,E,F

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IRAM136-3023B

Series

Integrated Power Hybrid IC for ow Voltage Motor Applications
30A, 150V
with Internal Shunt Resistor

International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low RDS on Advance Planar MOSFET Super Rugged technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new developed single in line package SiP3 with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.

Integrated ate Drivers Temperature Monitor and Protection Overcurrent shutdown ow RDS on Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power up to 4.0kW / 48~100 Vdc Fully Isolated Package, Isolation 2000VRMS min RoHS Compliant Recognized by U File umber E252584

Absolute Maximum Ratings

Parameter

Value

Units

VBR DSS V+

MOSFET Blocking Voltage Positive Bus Input Voltage
150 V

IO TC=25°C

RMS Phase Current ote 1

IO TC=100°C

RMS Phase Current ote 1

Pulsed RMS Phase Current ote 1 and 2

FPWM

PWM Carrier Frequency

Power Dissipation per MOSFET TC =25°C

VISO

Isolation Voltage 1min
2000

VRMS

TJ MOSFET & IC

Maximum Operating Junction Temperature
+150

Operating Case Temperature Range
-20 to +100

Storage Temperature Range
-40 to +125

Mounting Torque M4 screw
ote 1 Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
ote 2 tP<100ms TC=25°C FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"

IRAM136-3023B

Internal Electrical Schematic IRAM136-3023B

V+ 10

V- 12

R10A,B,C,D,E,F

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Datasheet ID: IRAM136-3023B 638308