SPP21N10
SPP21N10 Datasheet
SPI21N10 SPP21N10,SPB21N10 G
| Part | Datasheet |
|---|---|
SPP21N10 |
SPP21N10 (pdf) |
| Related Parts | Information |
|---|---|
SPI21N10 |
SPI21N10 |
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SPB21N10 G |
SPB21N10 G |
| PDF Datasheet Preview |
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| Power-Transistor Pb-free, RoHS compliant N-Channel, Enhancement mode operating temperature Avalanche rated PG-TO262-3-1 dv/dt rated SPI21N10 SPP21N10,SPB21N10 G Product Summary 100 V RDS on 80 m PG-TO263-3-2 PG-TO220-3-1 Type SPP21N10 SPB21N10 SPI21N10 Package PG-TO220-3-1 PG-TO263-3-2 PG-TO262-3-1 Marking 21N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current ID puls TC=25°C Avalanche energy, single pulse ID=21 A , VDD=25V, RGS=25 dv/dt IS=21A, VDS=80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Ptot Tj , Tstg Value 21 84 ±20 90 +175 55/175/56 Unit A mJ kV/µs V W °C 2006-11-14 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area F |
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