SPB10N10L G

SPB10N10L G Datasheet

SPB10N10L

Part	Datasheet
SPB10N10L G	SPB10N10L G (pdf)

Related Parts	Information
SPB10N10L	SPB10N10L

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Power-Transistor N-Channel Enhancement mode Logic Level operating temperature Avalanche rated dv/dt rated SPB10N10L Product Summary 100 V RDS on 154 m P-TO263-3-2 Type SPB10N10L Package P-TO263-3-2 Ordering Code Q67042-S4164 Marking 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=10.3 A , VDD=25V, RGS=25 ID puls EAS dv/dt IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value ±20 50 +175 55/175/56 Unit A mJ kV/µs V W °C 2005-02-14 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 SPB10N10L Values Unit min. typ. max. RthJC RthJA 3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 100

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Power-Transistor

N-Channel Enhancement mode Logic Level operating temperature Avalanche rated dv/dt rated

SPB10N10L

Product Summary
100 V

RDS on 154 m

P-TO263-3-2

Type SPB10N10L

Package P-TO263-3-2
Ordering Code Q67042-S4164

Marking 10N10L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current

TC=25°C TC=100°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=10.3 A , VDD=25V, RGS=25

ID puls EAS
dv/dt

IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage

Power dissipation

Ptot

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

Tj , Tstg

Value
±20 50
+175 55/175/56

Unit A
mJ kV/µs V W °C
2005-02-14

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 1

SPB10N10L

Values

Unit
min. typ. max.

RthJC RthJA
3 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values
min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V BR DSS 100

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPB10N10LG Datasheet file may be downloaded here without warranties.

Datasheet ID: SPB10N10LG 638291